Excellent Energy Storage Performance of ZnO doped (Pb,La)(Zr,Sn,Ti)O3 Based Antiferroelectric Ceramics at an Ultra-Low Sintering Temperature of 940 degree celsius

(Pb,La)(Zr,Sn,Ti)O-3-based antiferroelectric ceramics have excellent energy storage performance(more than 90% efficiency), which make them have great application advantages in the field of ceramic capacitors. However, the sintering temperature of (Pb,La)(Zr,Sn,Ti)O-3-based antiferroelectric ceramics is generally above 1250 degree celsius, which limits application as a material for ceramic capacitors. Cu inner electrode has a low co-firing temperature and high conductivity and a low cost price, making it more competitive in the field of ceramic capacitor inner electrode. Therefore, the first step is to reduce the sintering temperature of (Pb,La)(Zr,Sn,Ti)O-3-based ceramics to below 1000 degree celsius(co-firing temperature with Cu inner electrode), which is the key and difficult point. In this paper, Pb0.94La0.02Sr0.04(Zr0.45Sn0.47Ti0.08)(0.995)O-3(PLSZST) antiferroelectric ceramics are doped with ZnO, which effectively reduce the sintering temperature. Among them, PLSZST-1 wt% ZnO is sintered at an ultra-low sintering temperature (T-Sintering = 940 degree celsius), which is 330 degree celsius lower than that of PLSZST(T-Sintering = 1270 degree celsius) without doping ZnO. At the same time, PLSZST-1 wt%ZnO obtain a recoverable energy density of 4.26J cm(-3) and an energy efficiency of 95.5% at 230 kV cm(-1). The pulse discharge energy density (W-dis = 3.92 J cm(-3)) and discharge time (t(0.9) = 351 ns) are obtained at 220 kV cm(-1), and the current density (C-D = 1338A cm(-2)) and power density (P-D = 134MW cm(-3)) are obtained at 200 kV cm(-1). The results provide a possible material basis for Cu internal electrode ceramic capacitors.