Effects of proton implantation into 4H-SiC substrate: Stacking faults in epilayer on the substrate

This study explored proton implantation into 4H-SiC substrates to suppress the expansion of single Shockley stacking faults (SSSFs), which is a source of bipolar degradation in 4H-SiC devices. While previous research has demonstrated the effectiveness of proton implantation in epitaxial layers, concerns about defect generation have persisted. Therefore, we implanted protons into 4H-SiC substrates, followed by epitaxial growth. Then, we fabricate PiN diodes using the epitaxial layer aiming to reduce SSSF expansion and enhance PiN diode reliability. The results indicate that proton implantation has no significant suppression effects on the SSSF expansion, coupled with the undesired induction of double Shockley stacking faults. Thus, proton implantation into the substrates does not enhance the reliability of 4H-SiC devices, emphasizing the need for further investigations into suppression mechanisms.