Role of Rashba and Dresselhaus spin-orbit interactions on an off-center donor impurity in a Gaussian quantum dot

被引：11
作者：
Kachu, Anusha [1 ]
Chebrolu, Narasimha Raju [2 ]
Boda, Aalu [1 ]
机构：
[1] Natl Inst Technol Warangal, Dept Phys, Hanamkonda 506004, Telangana, India
[2] Cent Univ Karnataka, Dept Phys, Kalaburagi 585367, Karnataka, India
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2024年 / 589卷
关键词：
Two-dimensional Gaussian GaAs quantum dot; Donor impurity; Spin -orbit interactions; Temperature; Susceptibility; Oscillator strength; MAGNETIC-FIELD; TRANSPORT-PROPERTIES; HYDROGENIC IMPURITY; OSCILLATOR-STRENGTH; OPTICAL-PROPERTIES; BINDING-ENERGY; GROUND-STATE; GAAS; SUSCEPTIBILITY; D-0;
D O I：
10.1016/j.jmmm.2023.171565
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The Rashba and Dresselhaus spin-orbit interactions (SOIs) and the magnetic field effects on off-center hydrogen donor impurity (D0) in a two-dimensional Gaussian GaAs quantum dot (QD) are investigated. By performing a unitary transformation, the effect of the SOI incorporated and retained terms up to quadratic in the SOI constants (lambda R, lambda D). The variational method is engaged for the ensuing Hamiltonian with improved wave functions to determine the ground, first exited state energies, binding energies, transition energy and susceptibility of a (D0) impurity. The results show that the Rashba spin-orbit interaction (RSOI) reduces, the Dresselhaus spin-orbit interaction (DSOI) and magnetic field enhances the energy of the (D0) impurity. By equating the maximum binding energy of the (D0) system with KBT, we calculated the temperatures of the stable (D0) impurity. Finally, we calculated the oscillator strength (OS) and compared it to the available literature. OS shows remarkable behaviour to SOIs and QD parameters.
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页数：9
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