Novel Concurrent Dual-Band Power Amplifier Design Using A Bridged-T Coil-Based Impedance Matching Network

被引：1

作者：

Chou, Jing-Xuan ^{[1
]}

Lin, Yo-Shen ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, Taoyuan, Taiwan

来源：

2023 ASIA-PACIFIC MICROWAVE CONFERENCE, APMC | 2023年

关键词：

bridged-T coil; dual-band; GaAs; power amplifier;

D O I：

10.1109/APMC57107.2023.10439790

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a novel design of concurrent dual-band power amplifier is proposed. Specifically, dual-band impedance matching networks based on bridged-T coils are employed to simultaneously achieve the desired input/output impedance matching at two independent frequencies. The proposed 2.45/5.5-GHz concurrent dual-band power amplifier is implemented using a commercial 0.15-mu m GaAs pHEMT process. In the CW mode of operation, it achieves a power-added efficiency of 31.4/32.6% with a corresponding output power of 24.3/24.6 dBm at 2.45/5.5 GHz. A compact chip size of 2.5 mm x 2.0 mm is achieved, which is about 0.046 lambda(0) x 0.037 lambda(0) at 5.5 GHz.

引用

页码：515 / 517

页数：3

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