Performance Investigation of a Vertical TFET with Inverted-T Channel for Improved DC and Analog/Radio-Frequency Parameters

In this manuscript, a novel line tunneling based gate-on-source-only TFET with inverted T-shaped channel (ITGOSO-VTFET) is proposed and investigated using Synopsis TCAD 2-D simulator. The GOSO configuration along with dual counter-doped pockets (CDP) improve the ON-state current by enhancing the tunneling rate of charge carriers at source/channel interface while inverted T-shaped channel helps the proposed device in reducing the OFF-state (I-OFF) and ambipolar (I-AMB) currents. In comparison with double-gate (DG) and GoSo-CDP TFET, the order of I-OFF (I-AMB) in ITGOSO-VTFET are found to be improved by similar to 6 (similar to 4) and similar to 7(similar to 3), respectively. Furthermore, the impact of varying design parameters is analyzed in order to obtain the optimized performance of the proposed device. Apart from improvement in DC performance, ITGOSO-VTFET is also found to offering a much better analog/RF performance in terms of various parameters like g(m), f(T), TFP, GBP, and tau, which eventually makes the proposed device more suitable for low power and high-speed applications. (c) 2023 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited. [DOI: 10.1149/2162-8777/ accaa7]