Investigation Into the Third Quadrant Characteristics of Silicon Carbide MOSFET

被引：13

作者：

Tang, Lei ^{[1
]}

Jiang, Huaping ^{[1
]}

Zhong, Xiaohan ^{[1
]}

Qiu, Guanqun ^{[1
]}

Mao, Hua ^{[1
]}

Jiang, Xiaofeng ^{[1
]}

Qi, Xiaowei ^{[1
]}

Du, Changhong ^{[2
]}

Peng, Qianlei ^{[2
]}

Liu, Li ^{[1
,2
]}

Ran, Li ^{[3
]}

机构：

[1] Chongqing Univ, Sch Elect Engn, Chongqing 400044, Peoples R China

[2] Chongqing Changan New Energy Automobile Technol C, Power Dev Dept, Chongqing 400023, Peoples R China

[3] Univ Warwick, Sch Engn, Coventry CV4 7AL, W Midlands, England

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2023年 / 38卷 / 01期

关键词：

Body diode; MOSFET; silicon carbide; third quadrant (3rd-quad) characteristics; SIC MOSFET; SYNCHRONOUS RECTIFICATION; DIODE; MODEL;

D O I：

10.1109/TPEL.2022.3202705

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Owing to the superior performances, silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) attract a lot of attention. To increase the power density, it is desired to use the third quadrant (3rd-quad) characteristics of the MOSFET rather than the externally paralleled Schottky diode for freewheeling during the deadtime. It has been known that the 3rd-quad is far more than a body diode, and theMOS channel is also an important part of it. The channel may be not fully closed and, therefore, play a significant role in the reverse conduction even when the gate is zero or negatively biased. However, a comprehensive study of the 3rd-quad characteristics is still to be conducted. In this article, experiments and simulations are conducted and a physical model is developed to explain the 3rd-quad characteristics of the SiC MOSFET. It reveals how and why the 3rd-quad characteristics are affected by the gate voltage and the junction temperature. This article is helpful for not only the application of SiC MOSFET but also the device design.

引用

页码：1155 / 1165

页数：11

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