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First-principles study of NO adsorption on defective hexagonal boron nitride monolayer
被引:2
作者:
Kim, Do-Hyun
[1
]
Kim, Donghyeok
[2
]
Kim, Gyu Tae
[1
]
Kim, Hong-Dae
[2
]
机构:
[1] Korea Univ, Sch Elect Engn, 5-Ga,Anam Dong,Seongbuk Gu, Seoul 136713, South Korea
[2] Korea Inst Ind Technol, Green Mat & Proc R&D Grp, Ulsan 44413, South Korea
来源:
基金:
新加坡国家研究基金会;
关键词:
Hexagonal boron nitride;
Vacancy;
Density functional theory;
Nitrogen oxide;
Adsorption;
SELECTIVE CATALYTIC-REDUCTION;
LARGE-AREA;
BILAYER GRAPHENE;
SINGLE-LAYER;
MOS2;
EXFOLIATION;
NANOSHEETS;
GAS;
WS2;
D O I:
10.1016/j.susc.2023.122448
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
This study explored the potential of hexagonal boron nitride (h-BN) as a support for selective catalytic reduction (SCR) which means converting NOx to N2 and H2O with the aid of a catalyst. Specifically, we investigated the adsorption behavior of a NO molecule on a defective h-BN monolayer using density functional theory. Our results indicated that the initial configuration of N and O atoms over vacancy defects plays a key role in determining whether the NO molecule is adsorbed on the h-BN monolayer via covalent or ionic bonding. In the case of monovacancy, the O-N configuration of the NO gas resulted in lower total energy (Etotal) compared with the N-O configuration. Furthermore, electron localization function and Bader charge analysis, as well as projected density of states, revealed that the O-N configuration over B or N vacancy resulted in chemisorption by hybridizing porbitals. Furthermore, the di-vacancy system led to an even lower Etotal compared with the mono-vacancy case. In particular, both N and O atoms were adsorbed chemically to the edge of vacancy defects, irrespective of the NO configurations above the di-vacancy. Our calculations revealed that the presence of vacancy defects contributed to improving the adsorption of the NO molecule to the h-BN monolayer.
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页数:10
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