First-principles study of NO adsorption on defective hexagonal boron nitride monolayer
被引:2
作者:
Kim, Do-Hyun
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Korea Univ, Sch Elect Engn, 5-Ga,Anam Dong,Seongbuk Gu, Seoul 136713, South KoreaKorea Univ, Sch Elect Engn, 5-Ga,Anam Dong,Seongbuk Gu, Seoul 136713, South Korea
Kim, Do-Hyun
[1
]
Kim, Donghyeok
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机构:
Korea Inst Ind Technol, Green Mat & Proc R&D Grp, Ulsan 44413, South KoreaKorea Univ, Sch Elect Engn, 5-Ga,Anam Dong,Seongbuk Gu, Seoul 136713, South Korea
Kim, Donghyeok
[2
]
Kim, Gyu Tae
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Korea Univ, Sch Elect Engn, 5-Ga,Anam Dong,Seongbuk Gu, Seoul 136713, South KoreaKorea Univ, Sch Elect Engn, 5-Ga,Anam Dong,Seongbuk Gu, Seoul 136713, South Korea
Kim, Gyu Tae
[1
]
Kim, Hong-Dae
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Korea Inst Ind Technol, Green Mat & Proc R&D Grp, Ulsan 44413, South KoreaKorea Univ, Sch Elect Engn, 5-Ga,Anam Dong,Seongbuk Gu, Seoul 136713, South Korea
Kim, Hong-Dae
[2
]
机构:
[1] Korea Univ, Sch Elect Engn, 5-Ga,Anam Dong,Seongbuk Gu, Seoul 136713, South Korea
[2] Korea Inst Ind Technol, Green Mat & Proc R&D Grp, Ulsan 44413, South Korea
This study explored the potential of hexagonal boron nitride (h-BN) as a support for selective catalytic reduction (SCR) which means converting NOx to N2 and H2O with the aid of a catalyst. Specifically, we investigated the adsorption behavior of a NO molecule on a defective h-BN monolayer using density functional theory. Our results indicated that the initial configuration of N and O atoms over vacancy defects plays a key role in determining whether the NO molecule is adsorbed on the h-BN monolayer via covalent or ionic bonding. In the case of monovacancy, the O-N configuration of the NO gas resulted in lower total energy (Etotal) compared with the N-O configuration. Furthermore, electron localization function and Bader charge analysis, as well as projected density of states, revealed that the O-N configuration over B or N vacancy resulted in chemisorption by hybridizing porbitals. Furthermore, the di-vacancy system led to an even lower Etotal compared with the mono-vacancy case. In particular, both N and O atoms were adsorbed chemically to the edge of vacancy defects, irrespective of the NO configurations above the di-vacancy. Our calculations revealed that the presence of vacancy defects contributed to improving the adsorption of the NO molecule to the h-BN monolayer.
机构:
Sun Yat Sen Univ, Sch Chem & Chem Engn, Guangzhou 510275, Guangdong, Peoples R ChinaSun Yat Sen Univ, Sch Chem & Chem Engn, Guangzhou 510275, Guangdong, Peoples R China
Wang, Xiao-Ming
Lu, Shu-Shen
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机构:
Sun Yat Sen Univ, Sch Chem & Chem Engn, Guangzhou 510275, Guangdong, Peoples R ChinaSun Yat Sen Univ, Sch Chem & Chem Engn, Guangzhou 510275, Guangdong, Peoples R China
机构:
Anyang Normal Univ, Sch Phys, Anyang 455000, Peoples R China
Univ Hong Kong, Dept Mech Engn, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R ChinaAnyang Normal Univ, Sch Phys, Anyang 455000, Peoples R China
Ma, Dongwei
Ju, Weiwei
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机构:
Henan Univ Sci & Technol, Coll Phys & Engn, Luoyang 471023, Peoples R ChinaAnyang Normal Univ, Sch Phys, Anyang 455000, Peoples R China
Ju, Weiwei
Tang, Yanan
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机构:
Zhengzhou Normal Univ, Coll Phys & Elect Engn, Zhengzhou 450044, Henan, Peoples R ChinaAnyang Normal Univ, Sch Phys, Anyang 455000, Peoples R China
Tang, Yanan
Chen, Yue
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Univ Hong Kong, Dept Mech Engn, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R ChinaAnyang Normal Univ, Sch Phys, Anyang 455000, Peoples R China