First-principles study of NO adsorption on defective hexagonal boron nitride monolayer

被引:2
作者
Kim, Do-Hyun [1 ]
Kim, Donghyeok [2 ]
Kim, Gyu Tae [1 ]
Kim, Hong-Dae [2 ]
机构
[1] Korea Univ, Sch Elect Engn, 5-Ga,Anam Dong,Seongbuk Gu, Seoul 136713, South Korea
[2] Korea Inst Ind Technol, Green Mat & Proc R&D Grp, Ulsan 44413, South Korea
基金
新加坡国家研究基金会;
关键词
Hexagonal boron nitride; Vacancy; Density functional theory; Nitrogen oxide; Adsorption; SELECTIVE CATALYTIC-REDUCTION; LARGE-AREA; BILAYER GRAPHENE; SINGLE-LAYER; MOS2; EXFOLIATION; NANOSHEETS; GAS; WS2;
D O I
10.1016/j.susc.2023.122448
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
This study explored the potential of hexagonal boron nitride (h-BN) as a support for selective catalytic reduction (SCR) which means converting NOx to N2 and H2O with the aid of a catalyst. Specifically, we investigated the adsorption behavior of a NO molecule on a defective h-BN monolayer using density functional theory. Our results indicated that the initial configuration of N and O atoms over vacancy defects plays a key role in determining whether the NO molecule is adsorbed on the h-BN monolayer via covalent or ionic bonding. In the case of monovacancy, the O-N configuration of the NO gas resulted in lower total energy (Etotal) compared with the N-O configuration. Furthermore, electron localization function and Bader charge analysis, as well as projected density of states, revealed that the O-N configuration over B or N vacancy resulted in chemisorption by hybridizing porbitals. Furthermore, the di-vacancy system led to an even lower Etotal compared with the mono-vacancy case. In particular, both N and O atoms were adsorbed chemically to the edge of vacancy defects, irrespective of the NO configurations above the di-vacancy. Our calculations revealed that the presence of vacancy defects contributed to improving the adsorption of the NO molecule to the h-BN monolayer.
引用
收藏
页数:10
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