Millimeter Wave Thin-Film Bulk Acoustic Resonator in Sputtered Scandium Aluminum Nitride

被引：10

作者：

Cho, Sinwoo ^{[1
]}

Barrera, Omar ^{[1
]}

Simeoni, Pietro ^{[2
]}

Marshall, Emily N. ^{[3
]}

Kramer, Jack ^{[1
]}

Motoki, Keisuke ^{[3
]}

Hsu, Tzu-Hsuan ^{[1
,4
]}

Chulukhadze, Vakhtang ^{[1
]}

Rinaldi, Matteo ^{[2
]}

Doolittle, W. Alan ^{[3
]}

Lu, Ruochen ^{[1
]}

机构：

[1] Univ Texas Austin, Dept Elect & Comp Engn, Austin, TX 78712 USA

[2] Northeastern Univ, Dept Elect & Comp Engn, Boston, MA 02115 USA

[3] Georgia Inst Technol, Dept Elect & Comp Engn, Atlanta, GA 30332 USA

[4] Natl Tsing Hua Univ, Dept Power Mech Engn, Hsinchu 30013, Taiwan

来源：

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS | 2023年 / 32卷 / 06期

关键词：

Millimeter wave communication; Film bulk acoustic resonators; Acoustics; Films; Electrodes; Performance evaluation; Aluminum nitride; Acoustic resonators; piezoelectric devices; scandium aluminum nitride (ScAlN); millimeter-wave devices; thin-film bulk acoustic resonator (FBAR); thin-film devices;

D O I：

10.1109/JMEMS.2023.3321284

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work reports a millimeter wave (mmWave) thin-film bulk acoustic resonator (FBAR) in sputtered scandium aluminum nitride (ScAlN). This paper identifies challenges of frequency scaling sputtered ScAlN into mmWave and proposes a stack and new fabrication procedure with a sputtered Sc-0.3 Al-0.7 N on Al on Si carrier wafer. The resonator achieves electromechanical coupling ( k(2) ) of 7.0% and quality factor ( Q ) of 62 for the first-order symmetric (S1) mode at 21.4 GHz, along with k(2) of 4.0% and Q of 19 for the third-order symmetric (S3) mode at 55.4 GHz, showing higher figures of merit (FoM, k(2)& sdot;Q ) than reported AlN/ScAlN-based mmWave acoustic resonators. The ScAlN quality is identified by transmission electron microscopy (TEM) and X-ray diffraction (XRD), identifying the bottlenecks in the existing piezoelectric-metal stack. Further improvement of ScAlN/AlN-based mmWave acoustic resonators calls for better crystalline quality from improved thin-film deposition methods. [2023-0151]

引用

页码：529 / 532

页数：4

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