Synergy Effect of the Enhanced Local Electric Field and Built-In Electric Field of CoS/Mo-Doped BiVO4 for Photoelectrochemical Water Oxidation

被引:10
作者
Guan, Yuan [1 ]
Gu, Xinyi [1 ]
Deng, Qiankun [1 ]
Wang, Shaomang [3 ]
Li, Zhongyu [1 ]
Yan, Shicheng [2 ]
Zou, Zhigang [2 ]
机构
[1] Changzhou Univ, Sch Petrochem Engn, Jiangsu Prov Key Lab Fine Petrochem Engn, Changzhou 213164, Peoples R China
[2] Nanjing Univ, Coll Engn & Appl Sci, Ecomat & Renewable Energy Res Ctr ERERC, Nanjing 210093, Peoples R China
[3] Changzhou Univ, Sch Urban Construct, Changzhou 213164, Peoples R China
基金
中国国家自然科学基金;
关键词
CHARGE SEPARATION; EFFICIENT PHOTOANODE; DECORATED BIVO4; PERFORMANCE; OXIDE; MO; COMPOSITE; LAYER;
D O I
10.1021/acs.inorgchem.3c02622
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Bismuth vanadate is a promising material for photoelectrochemical water oxidation. However, it suffers from a low quantum efficiency, poor stability, and slow water oxidation kinetics. Here, we developed a novel photoanode of CoS/Mo-BiVO4 with excellent photoelectrochemical water oxidation performance. It achieved a photocurrent density of 4.5 mA cm(-2) at 1.23 V versus the reversible hydrogen electrode, similar to 4 times that of BiVO4. The CoS/Mo-BiVO4 photoanode also exhibited good stability, and the photocurrent density generated by the CoS/Mo-BiVO4 photoanode did not significantly decrease after light irradiation for 2 h. Upon replacement of part of the V with Mo doping in BiVO4, the local electric field around the Mo-O bond was enhanced, thus promoting carrier separation in BiVO4. The CoS was deposited on the surface of Mo-BiVO4, forming a built-in electric field at the interface. Under the action of the bias electric field and the built-in electric field, the carriers of CoS/Mo-BiVO4 were efficiently separated in the direction of the inverse type II heterojunction. In addition, CoS improved the light absorption and charge injection efficiency of the CoS/Mo-BiVO4 photoanode.
引用
收藏
页码:16919 / 16931
页数:13
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