Alloying with Ga promotes superconductivity in single-atomic Pb layer on Si(111)

被引：1

作者：

Bondarenko, L. V. ^{[1
]}

Tupchaya, A. Y. ^{[1
]}

Vekovshinin, Y. E. ^{[1
]}

Gruznev, D. V. ^{[1
]}

Kotlyar, V. G. ^{[1
]}

Utas, T. V. ^{[1
]}

Mihalyuk, A. N. ^{[1
,2
]}

Denisov, N. V. ^{[1
]}

Zotov, A. V. ^{[1
]}

Saranin, A. A. ^{[1
]}

机构：

[1] Inst Automat & Control Proc FEB RAS, 5 Radio St, Vladivostok 690041, Russia

[2] Far Eastern Fed Univ, Inst High Technol & Adv Mat, Vladivostok 690950, Russia

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2023年 / 969卷

关键词：

Silicon; Lead; Gallium; 2D compound; Superconductivity; Transport measurements; LEAD; THIN;

D O I：

10.1016/j.jallcom.2023.172453

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Alloying of the single-atom-thick Pb film on Si(111), the so-called striped incommensurate SIC-root 3 x root 3-Pb phase, with Ga has been found to result in the formation of the ordered 2D layer having the root 43 root 43 periodicity. In situ transport measurements have shown that the layer is superconductor with the critical temperature T-c = 2.48 K, which sufficiently exceeds the critical temperatures of the SIC-root 3 x root 3-Pb phase and bulk Ga. This finding opens the new ways to control low-dimensional superconductivity at the atomic scale limit through alloying appropriate species and get a success even when it does not take place in the case of the same bulk materials.

引用

页数：5

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