Nanographene-Based Heterojunctions for High-Performance Organic Phototransistor Memory Devices

被引：29

作者：

Bai, Shaoling ^{[1
,2
]}

Yang, Lin ^{[1
,3
]}

Haase, Katherina ^{[1
,2
]}

Wolansky, Jakob ^{[4
,5
]}

Zhang, Zongbao ^{[4
,5
]}

Tseng, Hsin ^{[4
,5
]}

Talnack, Felix ^{[1
,2
]}

Kress, Joshua ^{[4
,5
]}

Andrade, Jonathan Perez ^{[1
,2
,6
]}

Benduhn, Johannes ^{[4
,5
]}

Ma, Ji ^{[1
,3
,7
]}

Feng, Xinliang ^{[1
,3
,7
]}

Hambsch, Mike

Mannsfeld, Stefan C. B. ^{[2
]}

机构：

[1] Tech Univ Dresden, Ctr Adv Elect Dresden Cfaed, Helmholtzstr 18, D-01062 Dresden, Germany

[2] Tech Univ Dresden, Fac Elect & Comp Engn, Helmholtzstr 18, D-01062 Dresden, Germany

[3] Tech Univ Dresden, Fac Chem & Food Chem, Helmholtzstr 18, D-01062 Dresden, Germany

[4] Tech Univ Dresden, Dresden Integrated Ctr Appl Phys & Photon Mat IAPP, Nothnitzer Str 61, D-01187 Dresden, Germany

[5] Tech Univ Dresden, Inst Appl Phys, Nothnitzer Str 61, D-01187 Dresden, Germany

[6] Leibniz Inst Solid State & Mat Res, Helmholtzstr 20, D-01069 Dresden, Germany

[7] Max Planck Inst Microstruct Phys, Weinberg 2, D-06120 Halle, Germany

来源：

ADVANCED SCIENCE | 2023年 / 10卷 / 15期

基金：

欧盟地平线“2020”;

关键词：

memory; nanographene; organic phototransistors; photosensitivity; ELECTRON-MOBILITY TRANSISTORS; HYDROCARBONS; DETECTORS;

D O I：

10.1002/advs.202300057

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Organic phototransistors can enable many important applications such as nonvolatile memory, artificial synapses, and photodetectors in next-generation optical communication and wearable electronics. However, it is still a challenge to achieve a big memory window (threshold voltage response increment V-th) for phototransistors. Here, a nanographene-based heterojunction phototransistor memory with large increment V-th responses is reported. Exposure to low intensity light (25.7 mu W cm(-2)) for 1 s yields a memory window of 35 V, and the threshold voltage shift is found to be larger than 140 V under continuous light illumination. The device exhibits both good photosensitivity (3.6 x 10(5)) and memory properties including long retention time (>1.5 x 10(5) s), large hysteresis (45.35 V), and high endurance for voltage-erasing and light-programming. These findings demonstrate the high application potential of nanographenes in the field of optoelectronics. In addition, the working principle of these hybrid nanographene-organic structured heterojunction phototransistor memory devices is described which provides new insight into the design of high-performance organic phototransistor devices.

引用

页数：12

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