High Ion/Ioff ratio 4H-SiC MISFETs with stable operation at 500°C using SiO2/SiNx/Al2O3 gate stacks

被引：5

作者：

Kang, Junzhe ^{[1
]}

Xu, Kai ^{[1
]}

Lee, Hanwool ^{[1
]}

Bhattacharya, Souvik ^{[2
]}

Zhao, Zijing ^{[1
]}

Wang, Zhiyu ^{[3
]}

Mohan Sankaran, R. ^{[2
]}

Zhu, Wenjuan ^{[1
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Champaign, IL 61801 USA

[2] Univ Illinois, Dept Nucl Plasma & Radiol Engn, Champaign, IL 61801 USA

[3] Univ Illinois, Frederick Seitz Mat Res Lab, Champaign, IL 61801 USA

来源：

APPLIED PHYSICS LETTERS | 2023年 / 122卷 / 08期

关键词：

ELECTRON-TRANSPORT; INTERFACE STATES; CHANNEL MOBILITY; FIELD; MOSFETS; SIO2; DIELECTRICS; DENSITY; MEMORY; AL2O3;

D O I：

10.1063/5.0134729

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, 4H-SiC lateral metal-insulator-semiconductor field-effect transistors (MISFETs) were demonstrated to operate up to 50 degrees C with a high on/off current ratio (over 10(9)). A low off-state current of 3.6 x 10(-9) mA/mm at 500 degrees C was obtained in SiC MISFET with a ring structure. The MISFETs with SiO2/SiNx/Al2O3 gate dielectric stack showed minimum subthreshold swings of 155 and 240 mV/dec at room temperature and 500 & DEG;C, respectively, indicating good thermal stability of this gate dielectric stack on SiC. An interface trap density of 1.3 x 10(11) cm(-2) eV(-1) at E - E-V = 0.2 eV was extracted from the Capacitance-Voltage (CV) measurements at room temperature, which confirms excellent dielectric interface. The electron mobility increases with increasing temperature and reaches 39.4 cm(2)/V s at 500 degrees C. These results indicate that SiC MISFETs with triple layer dielectrics and ring structure have a high potential in extreme-temperature electronics.

引用

页数：6

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