Self-Powered ε-Ga2O3 Schottky Photodiode Array Featuring High External Quantum Efficiency Toward Solar-Blind UV Imaging

被引：1

作者：

Xia, Kang-Long ^{[1
,2
]}

Liu, Zeng ^{[1
,2
]}

Li, Shan ^{[1
,2
]}

Feng, Gan-Rong ^{[1
,2
]}

Guo, Yu-Feng ^{[1
,2
]}

Tang, Wei-Hua ^{[1
,2
]}

机构：

[1] Nanjing Univ Posts & Telecommun, Coll Integrated Circuit Sci & Engn, Innovat Ctr Gallium Oxide Semicond GAO, Nanjing 210023, Peoples R China

[2] Nanjing Univ Posts & Telecommun, Natl & Local Joint Engn Lab RF Integrat & Microas, Nanjing 210023, Peoples R China

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2024年 / 36卷 / 03期

关键词：

Gallium oxide; Schottky photodiode array; solar-blind UV detection; imaging;

D O I：

10.1109/LPT.2023.3330477

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, a Ga2O3-based Schottky photodiode array is fabricated and discussed, towards solar-blind UV image sensing application. The Ga2O3 thin film was prepared by metalorganic chemical vapor deposition, and the array was constructed via UV photolithography technique. Excited by 254 nm solar-blind UV light, the photodiode unit has responsivity, external quantum efficiency, and specific detectivity of 35.1 A/W, 1.7 x 10(4)% and 1.6 x 10(14) Jones at-10 V; and of 0.17 A/W, 83% and 1.94 x 10(13) Jones at 0 V. This indicates that it is a self-powered photodetector with high photo-response. The high external quantum efficiency at 0 V suggest a high efficient photon-electron conversion efficiency. In addition, the multi-pixels photodiode array exhibited low current deviation of 6.5% towards high-resolution and low chromatic aberration image sensing.

引用

页码：143 / 146

页数：4

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