A Method for Separation of Power Semiconductor Packaging-Related Wear-Out Mechanisms Under Converter Operation

被引：4

作者：

Peng, Yingzhou ^{[1
]}

Wang, Haoran ^{[2
]}

Wang, Huai ^{[3
]}

机构：

[1] Hunan Univ, Coll Elect & Informat Engn, Changsha 410012, Hunan, Peoples R China

[2] Three Gorges Intelligent Ind Control Technol Corp, Wuhan 430000, Peoples R China

[3] Aalborg Univ, Dept Energy Technol, DK-9100 Aalborg, Denmark

来源：

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS | 2024年 / 71卷 / 04期

关键词：

Degradation; Temperature measurement; Temperature sensors; Monitoring; Integrated circuits; Insulated gate bipolar transistors; Silicon carbide; Power semiconductor; separation; start-up; wear-out failure; IGBT MODULES; RELIABILITY; PROGNOSTICS; FAILURE; FAULTS;

D O I：

10.1109/TIE.2023.3273269

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

This article proposes a new method to separate the package-related wear-out failure mechanisms of wire-bonded silicon-based power semiconductor switches: bond-wires lift-off and solder layer degradation. The proposed method takes the on-state voltages of power semiconductor device during the start-up transient and steady state of power converters only, respectively, to realize the separation. It overcomes the challenges faced by existing separation methods that have complex offline implementation process or are applicable to the devices with specific bond-wires connection and operational characteristic. The proposed method has the features of easy-of-implementation, online implementation, and relatively general application compared to existing methods. A case study with a single-phase inverter is demonstrated to prove the effectiveness of the proposed method.

引用

页码：4201 / 4209

页数：9