Single-Switch Discontinuous Current-Source Gate Driver With Voltage Boosting Capability and No Current Diversion

被引:3
|
作者
Zare, Saeed [1 ]
Farzanehfard, Hosein [1 ]
机构
[1] Isfahan Univ Technol, Dept Elect & Comp Engn, Esfahan 8415683111, Iran
关键词
Current diversion problem; current-source gate driver (CSD); voltage-source gate driver (VSD); LOSS MODEL; CONVERTER; 1-MHZ; VRM;
D O I
10.1109/TPEL.2023.3298091
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article presents a novel single-switch discontinuous current-source gate driver (CSD)with voltage boosting capability appropriate for ultralow voltage applications. The power MOS-FET gate current using this CSD does not deviate during both turn-ON and turn-OFF transitions. Thus, in comparison to the previous CSDs, the effective gate current is much higher and nearly constant during switching transitions, whichwould reduce both turn-ON and turn-OFF transient intervals and consequently the switching losses. Other advantages of this CSD are low number of components, high C dv dt immunity, and the ability to increase the gate-source voltage to more than the gate-drive source voltage, which reduces the drain-source ON-resistance(R-DS(on)). The power MOSFET fast transition intervals and lowR(DS(on)) have contributed to improved efficiency. The proposed CSD is analyzed and theoretical analysis is verified by the stimulation and experimental results at 1 MHz.
引用
收藏
页码:12922 / 12931
页数:10
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