Single-Switch Discontinuous Current-Source Gate Driver With Voltage Boosting Capability and No Current Diversion

This article presents a novel single-switch discontinuous current-source gate driver (CSD)with voltage boosting capability appropriate for ultralow voltage applications. The power MOS-FET gate current using this CSD does not deviate during both turn-ON and turn-OFF transitions. Thus, in comparison to the previous CSDs, the effective gate current is much higher and nearly constant during switching transitions, whichwould reduce both turn-ON and turn-OFF transient intervals and consequently the switching losses. Other advantages of this CSD are low number of components, high C dv dt immunity, and the ability to increase the gate-source voltage to more than the gate-drive source voltage, which reduces the drain-source ON-resistance(R-DS(on)). The power MOSFET fast transition intervals and lowR(DS(on)) have contributed to improved efficiency. The proposed CSD is analyzed and theoretical analysis is verified by the stimulation and experimental results at 1 MHz.