A niobium pentoxide waveguide sensor for on-chip mid-infrared absorption spectroscopic methane measurement

被引:12
作者
Bi, Ran [1 ]
Pi, Mingquan [1 ]
Zheng, Chuantao [1 ]
Zhao, Huan [1 ]
Liang, Lei [2 ]
Song, Fang [1 ]
Wang, Dingdi [1 ]
Zhang, Yu [1 ]
Wang, Yiding [1 ]
Tittel, Frank K. [3 ]
机构
[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
[2] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China
[3] Rice Univ, Dept Elect & Comp Engn, 6100 Main St, Houston, TX 77005 USA
基金
中国国家自然科学基金;
关键词
Gas sensor; Infrared absorption spectroscopy; Metal oxide waveguide; Wavelength modulation spectroscopy; Methane detection; SENSING APPLICATIONS; OPTICAL-PROPERTIES;
D O I
10.1016/j.snb.2023.133567
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
The advantages of integrating infrared (IR) waveguide gas sensors on a chip include compactness, low power consumption, and high selectivity. Mid-IR waveguide sensors could be made of a variety of metal oxides with merits of low cost, high stability, transparency in the visible-IR spectrum, and non-toxicity. However, because most metal oxides have low refractive index, they are rarely used as waveguide core materials. To overcome this limitation, we chose niobium pentoxide (Nb2O5), a transparent material with high refractive index in the 0.35-10 mu m wavelength range, as the core layer. We fabricated a Nb2O5 rectangular waveguide gas sensor using magnetron sputtering and lift-off process. The Nb2O5 waveguide with an external confinement factor of 11.5% was used for on-chip methane measurement at 3.291 mu m based on wavelength modulation spectroscopy. A detection limit of 348 parts per million was achieved with an optimal averaging time of 61.2 s for a 2 cm long waveguide. The reported Nb2O5 waveguide gas sensor not only broadens the waveguide sensor core material family from silicon, chalcogenide (ChG) glass to metal oxides, but also provides detailed preparation and characterization methods for such kind of waveguide device.
引用
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页数:8
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