AlGaN as an electron transport layer for wide-bandgap perovskite solar cells

被引：2
作者：
Hombe, Atsushi [1 ]
Saiki, Shinya [1 ]
Mori, Tetsuya [1 ]
Saito, Yuji [1 ]
Tanimoto, Tsutomu [1 ]
机构：
[1] Nissan Motor Co Ltd, EV Syst Lab Res Div, Yokosuka, Kanagawa 2378523, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2023年 / 62卷 / SK期
关键词：
electric vehicles; photovoltaic; charging; aluminum gallium nitride; perovskite; electron transport layer; optical wireless power transfer; EFFICIENT; GAN; PROGRESS; OFFSET; FILMS;
D O I：
10.35848/1347-4065/acc2ca
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Perovskite solar cells are expected to be applied as photoreceivers for high-efficiency optical wireless power transfer for electric vehicles. The use of aluminum gallium nitride (AlGaN) as an electron transport layer (ETL) for wide-gap perovskite solar cells is hereby proposed in this paper. The electrical properties and energy-band alignment of AlGaN deposited by either hydride vapor phase epitaxy or metal-organic CVD are investigated. AlGaN shows a higher conduction band level than conventional ETL materials. Simulation of the performance of a perovskite solar cell with CH3NH3PbBr3 as the absorbing layer and AlGaN as the ETL was performed using a solar-cell capacitance simulator. The results suggest that AlGaN increases the power conversion efficiency of the solar cell by improving the conduction band offset between the perovskite layer and the ETL.
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页数：10
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