Evidence of silicide at the Ni/?-Si3N4(0001)/Si(111) interface

被引：2

作者：

Rajak, Piu ^{[1
,2
]}

Ciancio, Regina ^{[1
,3
]}

Caretta, Antonio ^{[4
]}

Laterza, Simone ^{[4
,5
]}

Bhardwaj, Richa ^{[4
]}

Jugovac, Matteo ^{[6
]}

Malvestuto, Marco ^{[1
,4
]}

Moras, Paolo ^{[6
]}

Flammini, Roberto ^{[7
]}

机构：

[1] Consiglio Nazl Ric Ist Officina Materiali, CNR IOM, Trieste, Italy

[2] Abdus Salam Int Ctr Theoret Phys, Via Beirut,6, I-34151 Trieste, Italy

[3] Area Sci Pk Basovizza SS, 14 Km 163-5, I-34149 Trieste, Italy

[4] Elettra Sincrotrone Trieste SCPA, Via A Valerio 2, I-34149 Trieste, Italy

[5] Univ Trieste, Dept Phys, Via A Valerio 2, I-34127 Trieste, Italy

[6] Consiglio Nazl Ric Ist Struttura Mat, CNR ISM, SS 14 km 163-5, I-34149 Trieste, Italy

[7] Consiglio Nazl Ric Ist Struttura Mat, CNR ISM, Via Fosso Cavaliere 100, I-00133 Rome, Italy

来源：

APPLIED SURFACE SCIENCE | 2023年 / 623卷

基金：

欧盟地平线“2020”;

关键词：

silicon nitride; Silicide; Metal; silicon interface; HRTEM; HAADF-STEM; EDS; THERMAL-EXPANSION; EPITAXIAL NISI2; NI; GROWTH; SURFACE; SI; MICROSCOPY; DIFFUSION; NITRIDE; SI(111);

D O I：

10.1016/j.apsusc.2023.156986

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We present a study of a sub-nanometre interlayer of crystalline silicon nitride at the Ni/Si interface. We performed transmission electron microscopy measurements complemented by energy dispersive X-ray analysis to investigate to what extent the nitride layer act as a barrier against atom diffusion. The results show that discontinuous silicide areas can form just below the nitride layer, whose composition is compatible with that of the nickel disilicide. The Ni-Si reaction is tentatively attributed to the thermal strain suffered by the interface during the deposition of Ni at low temperature.

引用

页数：8

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