Thermodynamic Analysis of Dissolved Oxygen in a Silicon Melt and the Effect of Processing Parameters on the Oxygen Distribution in Single-crystal Silicon During Czochralski Growth

被引：7

作者：

Li, Tai ^{[1
]}

Zhao, Liang ^{[2
]}

Lv, Guoqiang ^{[1
]}

Ma, Wenhui ^{[1
]}

Zhang, Mengyu ^{[1
]}

Huang, Zhenling ^{[1
]}

机构：

[1] Kunming Univ Sci & Technol, Fac Met & Energy Engn, Engn Res Ctr Silicon Met & Silicon Mat Yunnan Pro, Kunming 650093, Yunnan, Peoples R China

[2] Silicon Mat Co Ltd, Qujing Yangguang Energy, Qujing 655000, Peoples R China

来源：

SILICON | 2023年 / 15卷 / 02期

关键词：

Computer simulation; Czochralski method; Pulling rate; Crystal/crucible rotation speed; Oxygen impurity; Single-crystal silicon; SOLID-LIQUID INTERFACE; MULTICRYSTALLINE SILICON; TRANSPORT MECHANISM; CRUCIBLE ROTATION; CZ; PRECIPITATION; CARBON; MODEL; SOLIDIFICATION; CONVECTION;

D O I：

10.1007/s12633-022-02059-x

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The dissolved oxygen in a silicon melt at equilibrium at different temperatures and SiO partial pressures in Ar during Czochralski growth was subjected to thermodynamic analysis. The effect of the pulling rate and crystal/crucible speed on the oxygen distribution in single-crystal silicon was investigated by numerical calculations and experiments. The results showed that the oxygen equilibrium concentration increased as the partial pressure of SiO in Ar increased. The oxygen concentration in single-crystal silicon rods was lower than 14 ppma by using the optimized process in the constant-diameter stage. The crystal pulling rate was 1.6 mm/min, and the rotation speed of the crystal and crucible were about 10 rpm and -4 rpm, respectively. These results provide new ideas for reducing the concentration of oxygen impurities in single-crystal silicon and high-speed crystal growth for industrial single-crystal silicon production.

引用

页码：1049 / 1062

页数：14

共 42 条

[1] RAMAN-STUDY OF MECHANICAL STRESSES IN PROCESSES OF OXYGEN PRECIPITATION IN SILICON [J].