Synthesis and Characterization of Type II Ge-Si Clathrate Films for Optoelectronic Applications

被引:2
作者
Kumar, Rahul [1 ]
Kurita, Shiori [2 ]
Ohashi, Fumitaka [2 ]
Iida, Tamio [1 ]
Habuchi, Hitoe [1 ]
Kume, Tetsuji [2 ]
机构
[1] Natl Inst Technol KOSEN, Gifu Coll, Dept Elect & Comp Engn, Gifu 5010495, Japan
[2] Gifu Univ, Fac Engn, Gifu 5011193, Japan
关键词
clathrate; thin film synthesis; type II SiGe clathrate; HIGH-PRESSURE SYNTHESIS; SILICON CLATHRATE; OXIDATION;
D O I
10.3390/ma17020504
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Type II inorganic clathrates consist of cage-like structures with open frameworks, and they are considered promising materials due to their unique properties. However, the difficulty of synthesizing phase-pure and continuous films has hindered their application in practical devices. In this report, we demonstrate the synthesis of type II SiGe clathrate films through the thermal decomposition of a Na-deposited amorphous SiGe film on a sapphire substrate in a high vacuum. The as-prepared films of type II SiGe clathrates showed uniform growth and were evaluated for their structural and optical properties. Morphological studies conducted using a scanning electron microscope showed the presence of cracks on the film surface.
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页数:10
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