Efficient Flexible Organic Solar Cells with a Low-Temperature-Processed Al-Doped Zinc Oxide Electron Transport Layer

被引:3
作者
Jang, Jubin [1 ]
Kim, Ju-Hyeon [1 ]
Lee, Sanseong [1 ]
Oh, Chang-Mok [2 ]
Hwang, In-Wook [2 ]
Kim, Seungchan [3 ]
Park, Aeri [3 ]
Kang, Donghyun [1 ]
Jang, Chelim [1 ]
Ki, Taeyoon [1 ]
Kim, Heejoo [4 ]
Lee, Kwanghee [1 ]
机构
[1] Gwangju Inst Sci & Technol GIST, Res Inst Solar & Sustainable Energies RISE, Sch Mat Sci & Engn SMSE, Heeger Ctr Adv Mat HCAM, Gwangju 61005, South Korea
[2] Gwangju Inst Sci & Technol GIST, Adv Photon Res Inst APRI, Gwangju 61005, South Korea
[3] MSWAY Co Ltd, New Mat Business Div, GM Ctr Adv Dev Team, Gwangju 61005, South Korea
[4] Gwangju Inst Sci & Technol GIST, Inst Integrated Technol, Grad Sch Energy Convergence, Gwangju 61005, South Korea
基金
新加坡国家研究基金会;
关键词
electron transport layer; organic solar cells; low-temperature-processed ZnO; doping; defect; PERFORMANCE; NANOPARTICLES;
D O I
10.1021/acsaem.3c01860
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Zinc oxide (ZnO) has been widely used in inverted organic solar cells (I-OSCs) as the electron transport layer (ETL) due to its excellent electrical properties. However, the high-temperature process (>300 degrees C) applied to the ZnO ETL to enhance its electrical properties has been regarded as the bottleneck for application of this ETL to flexible I-OSCs due to the limited temperature tolerance of flexible substrates. In this work, we synthesized aluminum (Al)-doped ZnO with a sol-gel process (AZO) and successfully demonstrated highly efficient flexible I-OSCs with a low-temperature-processed (140 degrees C) AZO ETL (AZO 140 degrees C). Since Al doping of ZnO results in an enhanced electrical conductivity and reduced defects in ZnO even for lowtemperature-treated materials, the rigid and flexible I-OSCs with AZO 140 degrees C ETLs exhibit power conversion efficiencies (PCEs) of 16.3 and 14.4%, respectively, which are higher than those of I-OSCs with low-temperatureprocessed (140 degrees C) ZnO ETLs. Furthermore, the unencapsulated I-OSC with the AZO ETL exhibits improved storage stability (T-80 > 5000 h) compared to that with the ZnO ETL (T-80 = 100 h), and an excellent thickness-insensitive PCE is also obtained for the IOSCs with various thicknesses of the AZO ETL (22-190 nm). These results provide meaningful insight into reducing the process temperature of an ETL toward high-performance, flexible electronic systems.
引用
收藏
页码:9778 / 9787
页数:10
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