Back-End-of-Line Compatible Large-Area Molybdenum Disulfide Grown on Flexible Substrate: Enabling High-Performance Low-Power Memristor Applications

Transition-metal dichalcogenides(TMDs) in flexible technologycan offer large-area scalability and high-density integration witha low power consumption. However, incorporating large-area TMDs ina flexible platform is lacking in state-of-the-art data storage technologyowing to the high process temperature of TMDs. Low-temperature growthof TMDs can bridge mass production in flexible technology and reducethe complexity of the transferring process. Here, we introduce a crossbarmemory array enabled by low-temperature (250 & DEG;C) plasma-assistedchemical vapor deposited MoS2 directly grown on a flexiblesubstrate. The low-temperature sulfurization induces nanograins ofMoS(2) with multiple grain boundaries, allowing the pathfor charge particles, which leads to the formation of conducting filaments.The back-end-of-line compatible MoS2-based crossbar memristorsexhibit robust resistance switching (RS) behavior with a high on/offcurrent ratio of approximately & SIM;10(5), excellent endurance(>350 cycles), retention (>200000 s), and low operating voltage(& SIM;& PLUSMN;0.5V). Furthermore, the MoS2 synthesized at low temperatureon a flexible substrate facilitates RS characteristics demonstratedunder strain states and exhibits excellent RS performance. Thus, theuse of direct-grown MoS2 on a polyimide (PI) substratefor high-performance cross-bar memristors can transform emerging flexibleelectronics.