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The Precision Defect Engineering with Nonmetallic Element Refilling Strategy in g-C3N4 for Enhanced Photocatalytic Hydrogen Production
被引:63
|作者:
Liu, Yujie
[1
]
Tayyab, Muhammad
[1
]
Pei, Wenkai
[2
,3
]
Zhou, Liang
[2
,3
]
Lei, Juying
[2
,3
]
Wang, Lingzhi
[1
]
Liu, Yongdi
[2
,3
]
Zhang, Jinlong
[1
]
机构:
[1] East China Univ Sci & Technol, Shanghai Engn Res Ctr Multi media Environm Catalys, Feringa Nobel Prize Scientist Joint Res Ctr, Sch Chem & Mol Engn, Shanghai 200237, Peoples R China
[2] East China Univ Sci & Technol, Natl Engn Res Ctr Ind Wastewater Detoxicat & Resou, Sch Resources & Environm Engn, State Environm Protect Key Lab Environm Risk Asses, Shanghai 200237, Peoples R China
[3] Tongji Univ, Shanghai Inst Pollut Control & Ecol Secur, Shanghai 200092, Peoples R China
来源:
基金:
中国国家自然科学基金;
关键词:
heteroatom-refilling;
H-2;
evolution;
internal electric field;
nitrogen vacancies;
photocatalysis;
GRAPHITIC CARBON NITRIDES;
DOPED GRAPHENE;
SEPARATION;
EVOLUTION;
WATER;
D O I:
10.1002/smll.202208117
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
Traditional defect engineering and doping strategies are considered effective means for improving H-2 evolution, but the uncontrollability of the modification process does not always lead to efficient activity. A defect-induced heteroatom refilling strategy is used here to synthesize heteroatoms introduced carbon nitride by precisely controlling the "introduction" sites on efficient N1 sites. Density functional theory calculations show that the refilling of B, P, and S sites have stronger H2O adsorption and dissociation capacity than traditional doping, which makes it an optimal H-2 production path. The large internal electric field strength of heteroatom-refilled catalysts leads to fast electron transfer and the hydrogen production of the best sample is up to 20.9 mmol g(-1) h(-1). This work provides a reliable and clear insight into controlled defect engineering of photocatalysts and a universal modification strategy for typical heteroatom and co-catalyst systems for H-2 production.
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页数:11
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