Study of the Tunneling Effect on the Performance of Silicon Heterojunction Solar Cells

被引:1
作者
Duan, Yunkai [1 ]
Xu, Weihong [2 ]
He, Xiaoliang [1 ]
Jiang, Zhilong [1 ]
Lu, Hongyan [3 ]
Zhang, Song [3 ]
Liu, Cheng [1 ,4 ]
Wang, Shouyu [1 ,5 ]
Kong, Yan [1 ]
机构
[1] Jiangnan Univ, Sch Sci, Computat Opt Lab, Wuxi 214122, Jiangsu, Peoples R China
[2] Wuxi Vocat Inst Commerce, Coll Internet Things & Artificial Intelligence, Wuxi 214153, Jiangsu, Peoples R China
[3] DR Laser Technol Wuxi Co Ltd, Wuxi 214101, Peoples R China
[4] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
[5] OptiX Lab, Wuxi, Peoples R China
关键词
Heterojunction solar cell; AFORS-HET; tunneling effect; interface state density; doping level; CARRIER TRANSPORT MECHANISMS; OPTIMIZATION; SIMULATION; EFFICIENCY; RECOMBINATION; INVERSION; JUNCTIONS; LAYER;
D O I
10.1007/s11664-023-10291-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, to determine the tunneling effect on the performance of silicon heterojunction (SHJ) solar cells, we use AFORS-HET software to systematically study the carrier transport mechanism in different forward bias ranges under dark conditions. We confirm that the carrier transport in the p-type SHJ solar cell is determined by the recombination process at lower voltage (V < 0.3 V) and the tunneling current at higher voltage (0.3 < V < 0.6 V). Our results also suggest that the tunneling affected by the interface state density and doping level of a-Si:H influences the performance of devices. Moreover, we propose a new strategy to improve the performance of SHJ solar cells. By optimizing the above parameters, it was possible to increase the efficiency of a-Si:H(n)/c-Si(p)/a-Si:H(p) and a-Si:H(p)/c-Si(n)/a-Si:H(n) SHJ solar cells to 25.40% and 24.45%, respectively, to reduce the influence of the tunneling effect on the device. This work can be a useful reference for solar cell production and preparation.
引用
收藏
页码:3219 / 3227
页数:9
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