Strong perpendicular anisotropic ferromagnet Fe3GeTe2/graphene van der Waals heterostructure

被引：4

作者：

Zhao, Bing ^{[1
]}

Karpiak, Bogdan ^{[1
]}

Hoque, Anamul Md ^{[1
]}

Dhagat, Pallavi ^{[2
]}

Dash, Saroj P. ^{[1
,3
]}

机构：

[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, Quantum Device Phys Lab, SE-41296 Gothenburg, Sweden

[2] Oregon State Univ, Sch Elect Engn & Comp Sci, Corvallis, OR 97331 USA

[3] Chalmers Univ Technol, Graphene Ctr, SE-41296 Gothenburg, Sweden

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2023年 / 56卷 / 09期

基金：

瑞典研究理事会;

关键词：

Fe3GeTe2; graphene; van der Waals heterostructure; spin transport; spin absorption; FILMS;

D O I：

10.1088/1361-6463/acb801

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two-dimensional magnets offer a new platform for exploring fundamental properties in van der Waals (vdW) heterostructures and their device applications. Here, we investigated heterostructure devices of itinerant metallic vdW ferromagnet Fe3GeTe2 (FGT) with monolayer chemical vapor deposited graphene. The anomalous Hall effect measurements of FGT Hall-bar devices exhibit robust ferromagnetism with strong perpendicular anisotropy at low temperatures. The electrical transport properties measured in FGT/graphene heterostructure devices exhibit a tunneling transport with weak temperature dependence. We assessed the suitability of such FGT/graphene heterostructures for spin injection and detection and investigated the presence of FGT on possible spin absorption and spin relaxation in the graphene channel. These findings will be useful for engineering spintronic devices based on vdW heterostructures.

引用

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页数：8

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