Stacking Order Engineering of Two-Dimensional Materials and Device Applications

被引:38
作者
Fox, Carter [1 ,2 ]
Mao, Yulu [3 ]
Zhang, Xiang [4 ,5 ]
Wang, Ying [1 ,2 ,3 ]
Xiao, Jun [1 ,2 ]
机构
[1] Univ Wisconsin Madison, Dept Mat Sci & Engn, Madison, WI 53706 USA
[2] Univ Wisconsin Madison, Dept Phys, Madison, WI 53706 USA
[3] Univ Wisconsin Madison, Dept Elect & Comp Engn, Madison, WI 53706 USA
[4] Univ Hong Kong, Fac Sci, Hong Kong, Peoples R China
[5] Univ Hong Kong, Fac Engn, Hong Kong, Peoples R China
基金
美国国家科学基金会;
关键词
FEW-LAYER GRAPHENE; TRANSITION-METAL DICHALCOGENIDES; TWISTED BILAYER GRAPHENE; FRACTIONAL CHERN INSULATORS; CHEMICAL-VAPOR-DEPOSITION; SLIDING FERROELECTRICITY; PHASE-TRANSITION; RAMAN CHARACTERIZATION; INTERLAYER MAGNETISM; DIRECT VISUALIZATION;
D O I
10.1021/acs.chemrev.3c00618
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Stacking orders in 2D van der Waals (vdW) materials dictate the relative sliding (lateral displacement) and twisting (rotation) between atomically thin layers. By altering the stacking order, many new ferroic, strongly correlated and topological orderings emerge with exotic electrical, optical and magnetic properties. Thanks to the weak vdW interlayer bonding, such highly flexible and energy-efficient stacking order engineering has transformed the design of quantum properties in 2D vdW materials, unleashing the potential for miniaturized high-performance device applications in electronics, spintronics, photonics, and surface chemistry. This Review provides a comprehensive overview of stacking order engineering in 2D vdW materials and their device applications, ranging from the typical fabrication and characterization methods to the novel physical properties and the emergent slidetronics and twistronics device prototyping. The main emphasis is on the critical role of stacking orders affecting the interlayer charge transfer, orbital coupling and flat band formation for the design of innovative materials with on-demand quantum properties and surface potentials. By demonstrating a correlation between the stacking configurations and device functionality, we highlight their implications for next-generation electronic, photonic and chemical energy conversion devices. We conclude with our perspective of this exciting field including challenges and opportunities for future stacking order engineering research.
引用
收藏
页码:1862 / 1898
页数:37
相关论文
共 297 条
[91]  
Kane CL, 2002, PHYS REV LETT, V88, DOI 10.1103/PhysRevB.88.036401
[92]   A Molecular MoS2 Edge Site Mimic for Catalytic Hydrogen Generation [J].
Karunadasa, Hemamala I. ;
Montalvo, Elizabeth ;
Sun, Yujie ;
Majda, Marcin ;
Long, Jeffrey R. ;
Chang, Christopher J. .
SCIENCE, 2012, 335 (6069) :698-702
[93]   One-dimensional flat bands in twisted bilayer germanium selenide [J].
Kennes, D. M. ;
Xian, L. ;
Claassen, M. ;
Rubio, A. .
NATURE COMMUNICATIONS, 2020, 11 (01)
[94]   Moire heterostructures as a condensed-matter quantum simulator [J].
Kennes, Dante M. ;
Claassen, Martin ;
Xian, Lede ;
Georges, Antoine ;
Millis, Andrew J. ;
Hone, James ;
Dean, Cory R. ;
Basov, D. N. ;
Pasupathy, Abhay N. ;
Rubio, Angel .
NATURE PHYSICS, 2021, 17 (02) :155-163
[95]   Hybridization and localized flat band in the WSe2/MoSe2 heterobilayer [J].
Khalil, Lama ;
Pierucci, Debora ;
Velez-Fort, Emilio ;
Avila, Jose ;
Vergnaud, Celine ;
Dudin, Pavel ;
Oehler, Fabrice ;
Chaste, Julien ;
Jamet, Matthieu ;
Lhuillier, Emmanuel ;
Pala, Marco ;
Ouerghi, Abdelkarim .
NANOTECHNOLOGY, 2023, 34 (04)
[96]   Doped TiO2: the effect of doping elements on photocatalytic activity [J].
Khlyustova, Anna ;
Sirotkin, Nikolay ;
Kusova, Tatiana ;
Kraev, Anton ;
Titov, Valery ;
Agafonov, Alexander .
MATERIALS ADVANCES, 2020, 1 (05) :1193-1201
[97]   Stacking Structures of Few-Layer Graphene Revealed by Phase-Sensitive Infrared Nanoscopy [J].
Kim, Deok-Soo ;
Kwon, Hyuksang ;
Nikitin, Alexey Yu. ;
Ahn, Seongjin ;
Martin-Moreno, Luis ;
Garcia-Vidal, Francisco J. ;
Ryu, Sunmin ;
Min, Hongki ;
Kim, Zee Hwan .
ACS NANO, 2015, 9 (07) :6765-6773
[98]   Van der Waals Layer Transfer of 2D Materials for Monolithic 3D Electronic System Integration: Review and Outlook [J].
Kim, Jun-young ;
Ju, Xin ;
Ang, Kah-Wee ;
Chi, Dongzhi .
ACS NANO, 2023, 17 (03) :1831-1844
[99]   Non-epitaxial single-crystal 2D material growth by geometric confinement [J].
Kim, Ki Seok ;
Lee, Doyoon ;
Chang, Celesta S. ;
Seo, Seunghwan ;
Hu, Yaoqiao ;
Cha, Soonyoung ;
Kim, Hyunseok ;
Shin, Jiho ;
Lee, Ju-Hee ;
Lee, Sangho ;
Kim, Justin S. ;
Kim, Ki Hyun ;
Suh, Jun Min ;
Meng, Yuan ;
Park, Bo-In ;
Lee, Jung-Hoon ;
Park, Hyung-Sang ;
Kum, Hyun S. ;
Jo, Moon-Ho ;
Yeom, Geun Young ;
Cho, Kyeongjae ;
Park, Jin-Hong ;
Bae, Sang-Hoon ;
Kim, Jeehwan .
NATURE, 2023, 614 (7946) :88-+
[100]   Tunable moire bands and strong correlations in small-twist-angle bilayer graphene [J].
Kim, Kyounghwan ;
DaSilva, Ashley ;
Huang, Shengqiang ;
Fallahazad, Babak ;
Larentis, Stefano ;
Taniguchi, Takashi ;
Watanabe, Kenji ;
LeRoy, Brian J. ;
MacDonald, Allan H. ;
Tutuc, Emanuel .
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2017, 114 (13) :3364-3369