Nonvolatile Memristive Materials and Physical Modeling for In-Memory and In-Sensor Computing

被引:2
作者
Go, Shao-Xiang [1 ]
Lim, Kian-Guan [1 ]
Lee, Tae-Hoon [2 ,3 ]
Loke, Desmond K. [1 ]
机构
[1] Singapore Univ Technol & Design, Dept Sci Math & Technol, Singapore 487372, Singapore
[2] Univ Cambridge, Dept Engn, Trumpington St, Cambridge CB2 1PZ, England
[3] Kyungpook Natl Univ, Sch Mat Sci & Engn, Daegu 41566, South Korea
来源
SMALL SCIENCE | 2024年 / 4卷 / 03期
关键词
brain-inspired neuromorphic computing; in-memory computing; in-sensor computing; molecular dynamics simulations; nonvolatile memristive materials; physical unclonable functions; PHASE-CHANGE MEMORY; RANDOM-ACCESS-MEMORY; MAGNETIC TUNNEL-JUNCTIONS; RANDOM NUMBER GENERATOR; DOMAIN-WALL MOTION; SPIN-ORBIT TORQUE; HIGH THERMAL-STABILITY; SHORT-TERM PLASTICITY; AB-INITIO; RESISTANCE DRIFT;
D O I
10.1002/smsc.202300139
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Separate memory and processing units are utilized in conventional von Neumann computational architectures. However, regarding the energy and the time, it is costly to shuffle data between the memory and the processing entity, and for data-intensive applications associated with artificial intelligence, the demand is ever increasing. A paradigm shift in traditional architectures is required, and in-memory computing is one of the non-von-Neumann computing strategies. By harnessing physical signatures of the memory, computing workloads are administered in the same memory element. For in-memory computing, a wide range of memristive material (MM) systems have been examined. Moreover, developing computing schemes that perform in the same sensory network and that minimize the data shuffle between the processing unit and the sensing element is a requirement, to process large volumes of data efficiently and decrease the energy consumption. In this review, an overview of the switching character and system signature harnessed in three archetypal MM systems is rendered, along with an integrated application survey for developing in-sensor and in-memory computing, viz., brain-inspired or analogue computing, physical unclonable functions, and random number generators. The recent progress in theoretical studies that reveal the structural origin of the fast-switching ability of the MM system is further summarized. This review explores the utilization of memristive materials (MMs) as digital building blocks for in-memory and in-sensor computing. Switching mechanisms, material layer structures, MM operations, material system characteristics, theoretical studies, applications, and challenges and prospects for in-sensor and in-memory computations, for example, brain-inspired neuromorphic or analogue computing, physical unclonable functions, and random number generators, are discussed.image (c) 2024 WILEY-VCH GmbH
引用
收藏
页数:34
相关论文
共 531 条
  • [1] Abandoning C., 2019, NAT ELECTRON, V2, P263
  • [2] KMC Simulation of the Electroforming, Set and Reset Processes in Redox-Based Resistive Switching Devices
    Abbaspour, Elhameh
    Menzel, Stephan
    Hardtdegen, Alexander
    Hoffmann-Eifert, Susanne
    Jungemann, Christoph
    [J]. IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2018, 17 (06) : 1181 - 1188
  • [3] Element-Specific Magnetization Damping in Ferrimagnetic DyCo5 Alloys Revealed by Ultrafast X-ray Measurements
    Abrudan, Radu
    Hennecke, Martin
    Radu, Florin
    Kachel, Torsten
    Holldack, Karsten
    Mitzner, Rolf
    Donges, Andreas
    Khmelevskyi, Sergii
    Deak, Andras
    Szunyogh, Laszlo
    Nowak, Ulrich
    Eisebitt, Stefan
    Radu, Ilie
    [J]. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2021, 15 (08):
  • [4] Abunahla H, 2016, IEEE INT SYMP CIRC S, P1590, DOI 10.1109/ISCAS.2016.7538868
  • [5] Application of the Mott-Schottky model to select potentials for EIS studies on electrodes for electrochemical charge storage
    Adan-Mas, Alberto
    Silva, Teresa M.
    Guerlou-Demourgues, Liliane
    Montemor, Maria Fatima
    [J]. ELECTROCHIMICA ACTA, 2018, 289 : 47 - 55
  • [6] Change in Structure of Amorphous Sb-Te Phase-Change Materials as a Function of Stoichiometry
    Ahmed, Shehzad
    Wang, Xudong
    Li, Heming
    Zhou, Yuxing
    Chen, Yuhan
    Sun, Liang
    Zhang, Wei
    Mazzarello, Riccardo
    [J]. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2021, 15 (06):
  • [7] Structural phase transitions on the nanoscale:: The crucial pattern in the phase-change materials Ge2Sb2Te5 and GeTe
    Akola, J.
    Jones, R. O.
    [J]. PHYSICAL REVIEW B, 2007, 76 (23):
  • [8] A 3-D Crossbar Architecture for Both Pipeline and Parallel Computations
    Aljafar, Muayad J.
    Acken, John M.
    [J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2021, 68 (11) : 4456 - 4469
  • [9] Field-free switching of VG-SOT-pMTJ device through the interplay of SOT, exchange bias, and VCMA effects
    Alla, Srija
    Joshi, Vinod Kumar
    Bhat, Somashekara
    [J]. JOURNAL OF APPLIED PHYSICS, 2023, 134 (01)
  • [10] Equivalent-accuracy accelerated neural-network training using analogue memory
    Ambrogio, Stefano
    Narayanan, Pritish
    Tsai, Hsinyu
    Shelby, Robert M.
    Boybat, Irem
    di Nolfo, Carmelo
    Sidler, Severin
    Giordano, Massimo
    Bodini, Martina
    Farinha, Nathan C. P.
    Killeen, Benjamin
    Cheng, Christina
    Jaoudi, Yassine
    Burr, Geoffrey W.
    [J]. NATURE, 2018, 558 (7708) : 60 - +