Ultralow thermal conductivity of amorphous silicon-germanium thin films for alloy and disorder scattering determined by 3ω method and nanoindentation

被引：2

作者：

Tanisawa, Daiki ^{[1
]}

Shionozaki, Yoshiyuki ^{[1
]}

Takizawa, Tetsuya ^{[1
]}

Yamaguchi, Asato ^{[2
]}

Murotani, Hiroshi ^{[2
]}

Takashiri, Masayuki ^{[1
]}

机构：

[1] Tokai Univ, Dept Mat Sci, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 2591292, Japan

[2] Tokai Univ, Dept Electrophotoopt Engn, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 2591292, Japan

来源：

APPLIED PHYSICS EXPRESS | 2024年 / 17卷 / 01期

基金：

日本学术振兴会;

关键词：

thermal conductivity; amorphous; silicon-germanium; phonon mean free path; group velocity; THERMOELECTRIC GENERATORS; CARBON NANOTUBES; RECENT PROGRESS; HEAT;

D O I：

10.35848/1882-0786/ad14f1

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The ultralow thermal conductivity (1.3 W/(m center dot K)) of amorphous silicon-germanium films for alloy and disorder scattering was investigated using the 3 omega method and nanoindentation. The films exhibited the lowest phonon mean free path (MFP) of 0.5 nm compared to that of amorphous silicon (1.1 nm) and germanium (0.9 nm) films, owing to alloy scattering in the silicon-germanium films. Based on Matthiessen's rule, the phonon MFPs of the amorphous silicon-germanium films contributing to alloy and disorder scattering were calculated to be 1.0 nm for both. Therefore, alloy and disorder scattering contribute equally to the reduction in the phonon MFP.

引用

页数：5

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