Thermal dissipation enhancement in flip-chip bonded uni-traveling carrier photodiodes

被引:1
|
作者
Bai, Junwu [1 ]
Shen, Yang [1 ]
Yao, Peng [2 ]
Chen, Dekang [1 ]
Konkol, Matthew [2 ]
Guo, Bingtian [1 ]
Guo, Xiangwen [1 ]
Carey, Victoria [2 ]
Campbell, Joe C. [1 ]
Prather, Dennis [2 ]
机构
[1] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA
[2] Phase Sensit Innovat, Newark, DE 19713 USA
关键词
HIGH-POWER; HIGH-SPEED; PERFORMANCE; DESIGN;
D O I
10.1364/OL.501224
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The thermal properties of modified uni-traveling carrier (MUTC) photodiode flip-chip bonded to AlN and diamond are simulated. The thermal impedance of InGaAs is the primary source of internal heating. An n-down epitaxial structure is designed to improve thermal dissipation. Com-pared to the conventional p-down configuration, the n-down MUTCs bonded to diamond, or AlN submounts achieved 145% and 110% improvement in dissipated power density at thermal failure, respectively. The improved thermal characteristics presage higher RF output power before thermal failure. (c) 2023 Optica Publishing Group
引用
收藏
页码:5157 / 5160
页数:4
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