Thermal dissipation enhancement in flip-chip bonded uni-traveling carrier photodiodes

被引：1

作者：

Bai, Junwu ^{[1
]}

Shen, Yang ^{[1
]}

Yao, Peng ^{[2
]}

Chen, Dekang ^{[1
]}

Konkol, Matthew ^{[2
]}

Guo, Bingtian ^{[1
]}

Guo, Xiangwen ^{[1
]}

Carey, Victoria ^{[2
]}

Campbell, Joe C. ^{[1
]}

Prather, Dennis ^{[2
]}

机构：

[1] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA

[2] Phase Sensit Innovat, Newark, DE 19713 USA

来源：

OPTICS LETTERS | 2023年 / 48卷 / 19期

关键词：

HIGH-POWER; HIGH-SPEED; PERFORMANCE; DESIGN;

D O I：

10.1364/OL.501224

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The thermal properties of modified uni-traveling carrier (MUTC) photodiode flip-chip bonded to AlN and diamond are simulated. The thermal impedance of InGaAs is the primary source of internal heating. An n-down epitaxial structure is designed to improve thermal dissipation. Com-pared to the conventional p-down configuration, the n-down MUTCs bonded to diamond, or AlN submounts achieved 145% and 110% improvement in dissipated power density at thermal failure, respectively. The improved thermal characteristics presage higher RF output power before thermal failure. (c) 2023 Optica Publishing Group

引用

页码：5157 / 5160

页数：4

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