Boosting stability of inverted perovskite solar cells with magnetron-sputtered molybdenum rear electrodes

被引:7
作者
Jiang, Zhao-Yi [1 ]
Pan, Ming [1 ]
Ren, Fu-Meng [1 ]
Chen, Rui [1 ]
Sun, Zhen-Xing [1 ]
Yang, Zhi-Chun [2 ,3 ]
Liu, Zong-Hao [1 ]
Chen, Wei [1 ,4 ,5 ]
机构
[1] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China
[2] Shanxi Univ, Inst Laser Spect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan 030006, Peoples R China
[3] Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Peoples R China
[4] Opt Valley Lab, Wuhan 430074, Hubei, Peoples R China
[5] Contemporary Amperex Technol Ltd, 21C Innovat Lab, Ningde 352100, Peoples R China
基金
中国国家自然科学基金;
关键词
Perovskite solar cells (PSCs); Magnetron; sputtering; Rear electrodes; Molybdenum; Stability; EFFICIENT; DEGRADATION; MIGRATION; BUFFER;
D O I
10.1007/s12598-023-02426-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Perovskite solar cells (PSCs) have attracted widespread attention because of their remarkable efficiency, low cost, and ease of fabrication. However, the operational stability of the PSCs still suffers from the corrosion of metal electrodes induced by metal-halide reactions. Herein, we propose a feasible strategy for improving the stability of inverted PSCs by using magnetron-sputtered Mo rear electrodes. Coupled with a bismuth (Bi) buffer layer prepared by thermal evaporation, the damage from the magnetron sputtering process toward the underlayers can be effectively relieved. Consequently, based on the Bi ? Mo bilayer electrode, the inverted PSCs with a NiMgLiO hole transport layer exhibited a power conversion efficiency (PCE) of 18.82%. In addition to their excellent stability at high temperatures, compact Mo films can inhibit the decomposition of Perovskite (Pvk) films in the devices. The PSCs with the Bi/Mo bilayer electrode maintained 97.9% of its initial efficiency, showing better stability than PSCs with the traditional Ag electrode after aging for 3000 h under continuous light illumination.
引用
收藏
页码:3741 / 3754
页数:14
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