In this work, we propose a reconfigurable and nonvolatile 9-mu m-long silicon polarization rotator using Sb2Se3 as low-loss phase-change material. Through numerical simulations, our device exhibits extinction ratios up to 26.6 dB and insertion losses as low as 1.9 dB at 1550 nm.
机构:
RAS, Far Eastern Branch, Inst Automat & Control Proc, Vladivostok 690041, Russia
Far Eastern Fed Univ, Sch Nat Sci, Vladivostok 690950, RussiaRAS, Far Eastern Branch, Inst Automat & Control Proc, Vladivostok 690041, Russia
Matetskiy, A., V
Mararov, V. V.
论文数: 0引用数: 0
h-index: 0
机构:
RAS, Far Eastern Branch, Inst Automat & Control Proc, Vladivostok 690041, RussiaRAS, Far Eastern Branch, Inst Automat & Control Proc, Vladivostok 690041, Russia
Mararov, V. V.
Kibirev, I. A.
论文数: 0引用数: 0
h-index: 0
机构:
RAS, Far Eastern Branch, Inst Automat & Control Proc, Vladivostok 690041, RussiaRAS, Far Eastern Branch, Inst Automat & Control Proc, Vladivostok 690041, Russia
Kibirev, I. A.
Zotov, A., V
论文数: 0引用数: 0
h-index: 0
机构:
RAS, Far Eastern Branch, Inst Automat & Control Proc, Vladivostok 690041, Russia
Far Eastern Fed Univ, Sch Nat Sci, Vladivostok 690950, RussiaRAS, Far Eastern Branch, Inst Automat & Control Proc, Vladivostok 690041, Russia
Zotov, A., V
Saranin, A. A.
论文数: 0引用数: 0
h-index: 0
机构:
RAS, Far Eastern Branch, Inst Automat & Control Proc, Vladivostok 690041, Russia
Far Eastern Fed Univ, Sch Nat Sci, Vladivostok 690950, RussiaRAS, Far Eastern Branch, Inst Automat & Control Proc, Vladivostok 690041, Russia