Preparation and photoluminescence properties of novel orange-red La3Ga5SiO14:Sm3+phosphors

In the present work, orange-red Sm3+ doped La3Ga5SiO14 phosphors were successfully formed through high temperature solid state method at 1350 degrees C. The phase purity, size distribution, vibrations, absorption and series of luminescence characteristics were studied, respectively. The X-ray diffraction and Rietveld refinements results show the single phase and crystal lattice information. The results of scanning electron microscope and energy-dispersive spectroscopy demonstrate the basic particle shape and verify the constituent elements for the pre-pared samples. The infrared spectra clarify the phonon vibration properties of the La3Ga5SiO14:Sm3+ phosphors. The UV-visible absorption spectra indicate that the absorption properties and the corresponding band gaps. The luminescence results show that the La3Ga5SiO14:Sm3+ phosphors emit intense orange-red emission peaking at 600 nm as excited at 401 nm. The optimum doping concentration of Sm3+ ion is x = 0.05 and the mechanism of concentration quenching is from dipole-quadrupole interaction. In addition, the prepared phosphors have good thermostability, and its thermal activation energy is 0.2161 ev. Finally, red and white light emitting diodes were successfully manufactured with 395 nm chip. All experimental results show that the La3Ga5SiO14:Sm3+ phos-phors have good application prospect in light emitting diodes.