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Enhancing Photodetection Ability of MoS2 Nanoscrolls via Interface Engineering
被引:7
作者:
Su, Jun
[1
,2
]
Li, Xin
[1
,2
]
Xu, Minxuan
[1
,2
]
Zhang, Jian
[2
]
Liu, Xiaolian
[2
]
Zheng, Xin
[1
,2
]
Shi, Yueqin
[1
,2
]
Zhang, Qi
[1
,2
]
机构:
[1] Hangzhou Dianzi Univ HDU, Coll Mat & Environm Engn, Ctr Adv Optoelect Mat, Hangzhou 310018, Peoples R China
[2] Hangzhou Dianzi Univ HDU, Key Lab Novel Mat Sensor Zhejiang Prov, Hangzhou 310018, Peoples R China
基金:
中国国家自然科学基金;
关键词:
nanoscroll;
1D;
interface engineering;
optoelectronics;
van der Waals;
MONOLAYER MOS2;
BARIUM-TITANATE;
THIN-FILMS;
PHOTOLUMINESCENCE;
RAMAN;
POLARIZATION;
TRANSITION;
NANOTUBES;
EMISSION;
TRIONS;
D O I:
10.1021/acsami.2c18537
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
Van der Waals semiconductors have been really confirmed in two-dimensional (2D) layered systems beyond the traditional limits of lattice-matching requirements. The extension of this concept to the 1D atomic level may generate intriguing physical functionalities due to its non-covalent bonding surface. However, whether the curvature of the lattice in such rolled-up structures affects their optoelectronic features or the performance of devices established on them remains an open question. Here, MoS2-based nanoscrolls were obtained by virtue of an alkaline solution-assisted method and the 0D/1D (BaTiO3/MoS2) strategy to tune their optoelectronic properties and improve the light sensing performance was explored. The capillary force generated by a drop of NaHCO3 solution could drive the delamination of nanosheets from the underlying substrate and a spontaneous rolling-up process. The package of BaTiO3 particles in MoS2 nanoscrolls has been evident by TEM image, and the optical characterizations were mirrored via micro-Raman spectroscopy and photoluminescence. These bare MoS2 nanoscrolls reveal a reduced photoresponse compared to the plane structures due to the curvature of the lattice. However, such BaTiO3/MoS2 nanoscrolls exhibit a significantly improved photodetection (R-hybrid = 73.9 A/ W vs R-only = 1.1 A/W and R-2D = 1.5 A/W at 470 nm, 0.58 mW center dot cm(-2)), potentially due to the carrier extraction/injection occurring between BaTiO3 and MoS2. This study thereby provides an insight into 1D van der Waals material community and demonstrates a general approach to fabricate high-performance 1D van der Waals optoelectronic devices.
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页码:3307 / 3316
页数:10
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