Enhancing Photodetection Ability of MoS2 Nanoscrolls via Interface Engineering

被引:7
|
作者
Su, Jun [1 ,2 ]
Li, Xin [1 ,2 ]
Xu, Minxuan [1 ,2 ]
Zhang, Jian [2 ]
Liu, Xiaolian [2 ]
Zheng, Xin [1 ,2 ]
Shi, Yueqin [1 ,2 ]
Zhang, Qi [1 ,2 ]
机构
[1] Hangzhou Dianzi Univ HDU, Coll Mat & Environm Engn, Ctr Adv Optoelect Mat, Hangzhou 310018, Peoples R China
[2] Hangzhou Dianzi Univ HDU, Key Lab Novel Mat Sensor Zhejiang Prov, Hangzhou 310018, Peoples R China
基金
中国国家自然科学基金;
关键词
nanoscroll; 1D; interface engineering; optoelectronics; van der Waals; MONOLAYER MOS2; BARIUM-TITANATE; THIN-FILMS; PHOTOLUMINESCENCE; RAMAN; POLARIZATION; TRANSITION; NANOTUBES; EMISSION; TRIONS;
D O I
10.1021/acsami.2c18537
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Van der Waals semiconductors have been really confirmed in two-dimensional (2D) layered systems beyond the traditional limits of lattice-matching requirements. The extension of this concept to the 1D atomic level may generate intriguing physical functionalities due to its non-covalent bonding surface. However, whether the curvature of the lattice in such rolled-up structures affects their optoelectronic features or the performance of devices established on them remains an open question. Here, MoS2-based nanoscrolls were obtained by virtue of an alkaline solution-assisted method and the 0D/1D (BaTiO3/MoS2) strategy to tune their optoelectronic properties and improve the light sensing performance was explored. The capillary force generated by a drop of NaHCO3 solution could drive the delamination of nanosheets from the underlying substrate and a spontaneous rolling-up process. The package of BaTiO3 particles in MoS2 nanoscrolls has been evident by TEM image, and the optical characterizations were mirrored via micro-Raman spectroscopy and photoluminescence. These bare MoS2 nanoscrolls reveal a reduced photoresponse compared to the plane structures due to the curvature of the lattice. However, such BaTiO3/MoS2 nanoscrolls exhibit a significantly improved photodetection (R-hybrid = 73.9 A/ W vs R-only = 1.1 A/W and R-2D = 1.5 A/W at 470 nm, 0.58 mW center dot cm(-2)), potentially due to the carrier extraction/injection occurring between BaTiO3 and MoS2. This study thereby provides an insight into 1D van der Waals material community and demonstrates a general approach to fabricate high-performance 1D van der Waals optoelectronic devices.
引用
收藏
页码:3307 / 3316
页数:10
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