A 8.1-nW, 4.22-kHz,-40-85 °C relaxation oscillator with subthreshold leakage current compensation and forward body bias buffer for low power IoT applications

被引：2

作者：

Zhou, Rong ^{[1
]}

Wang, Linwei ^{[1
]}

Yang, Jianhang ^{[1
]}

Li, Zhen ^{[1
]}

Zhao, Xiaoteng ^{[1
]}

Liu, Shubin ^{[1
]}

机构：

[1] Xidian Univ, Minist Educ, Sch Microelect, Key Lab Analog Integrated Circuits & Syst, Xian 710071, Peoples R China

来源：

MICROELECTRONICS JOURNAL | 2024年 / 144卷

基金：

中国国家自然科学基金;

关键词：

Relaxation oscillator (RxO); Low power; Subthreshold leakage current compensation; (SLC); Forward body bias (FBB); Internet of Things (IoT);

D O I：

10.1016/j.mejo.2024.106090

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a relaxation oscillator (RxO) utilizing subthreshold transistor leakage current compensation (SLC) technology to expand the operating range from 70 degrees C to 85 degrees C at high temperatures. The compensated RxO outperforms the uncompensated counterpart by 25 times for temperature coefficient (TC). Additionally, forward body bias (FBB) technology optimizes the digital buffer delay with temperature drift at low supply voltage, extending the oscillator's low-temperature range from -20 degrees C to -40 degrees C. Fabricated in a 65 nm CMOS process, the oscillator consumes a mere 8.1 nW at a 0.4 V supply voltage. At room temperature, it operates at 4.22 kHz with an energy efficiency of 1.92 nW/kHz. The oscillator demonstrates a temperature coefficient (TC) of 114.01 ppm/degrees C within the range of -40 degrees C to 85 degrees C, rendering it a prospective choice for low-power Internet of Things (IoT) applications.

引用

页数：7

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