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Dipolar interactions enhanced by two-dimensional dielectric screening in few-layer van der Waals structures
被引:3
|作者:
Hou, Yuhang
[1
,2
]
Yu, Hongyi
[1
,2
,3
]
机构:
[1] Sun Yat Sen Univ, Guangdong Prov Key Lab Quantum Metrol & Sensing, Zhuhai Campus, Zhuhai 519082, Peoples R China
[2] Sun Yat Sen Univ, Sch Phys & Astron, Zhuhai Campus, Zhuhai 519082, Peoples R China
[3] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou Campus, Guangzhou 510275, Peoples R China
关键词:
interlayer exciton;
dipolar interaction;
transition metal dichalcogenides;
van der Waals stacking;
INTERLAYER EXCITONS;
MONOLAYER;
OPTOELECTRONICS;
INSULATOR;
ELECTRON;
DYNAMICS;
D O I:
10.1088/2053-1583/ad2525
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
We theoretically examined how the dielectric screening of two-dimensional (2D) layered materials affects the dipolar interaction between interlayer excitons (IXs) in few-layer van der Waals structures. Our analysis indicates that the dipolar interaction is largely enhanced by 2D dielectric screening at an inter-exciton separation of several nanometers or larger. The underlying mechanism can be attributed to the induced-charge densities in layered materials, which give rise to induced-dipole densities at large distances with directions parallel to that of the IX. The interaction between quadrupolar excitons in trilayer structures are found to be enhanced even larger, with a magnitude one to two orders stronger than that without 2D dielectric screening. The strengths of these dipolar and quadrupolar interactions can be further tuned by engineering the dielectric environment.
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页数:11
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