Dipolar interactions enhanced by two-dimensional dielectric screening in few-layer van der Waals structures

被引:3
|
作者
Hou, Yuhang [1 ,2 ]
Yu, Hongyi [1 ,2 ,3 ]
机构
[1] Sun Yat Sen Univ, Guangdong Prov Key Lab Quantum Metrol & Sensing, Zhuhai Campus, Zhuhai 519082, Peoples R China
[2] Sun Yat Sen Univ, Sch Phys & Astron, Zhuhai Campus, Zhuhai 519082, Peoples R China
[3] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou Campus, Guangzhou 510275, Peoples R China
关键词
interlayer exciton; dipolar interaction; transition metal dichalcogenides; van der Waals stacking; INTERLAYER EXCITONS; MONOLAYER; OPTOELECTRONICS; INSULATOR; ELECTRON; DYNAMICS;
D O I
10.1088/2053-1583/ad2525
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We theoretically examined how the dielectric screening of two-dimensional (2D) layered materials affects the dipolar interaction between interlayer excitons (IXs) in few-layer van der Waals structures. Our analysis indicates that the dipolar interaction is largely enhanced by 2D dielectric screening at an inter-exciton separation of several nanometers or larger. The underlying mechanism can be attributed to the induced-charge densities in layered materials, which give rise to induced-dipole densities at large distances with directions parallel to that of the IX. The interaction between quadrupolar excitons in trilayer structures are found to be enhanced even larger, with a magnitude one to two orders stronger than that without 2D dielectric screening. The strengths of these dipolar and quadrupolar interactions can be further tuned by engineering the dielectric environment.
引用
收藏
页数:11
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