Low-Earth Orbit User Segment in the Ku and Ka-Band

被引：32

作者：

Amendola, Giandomenico ^{[1
]}

Cavallo, Daniele ^{[2
]}

Chaloun, Tobias ^{[3
]}

Defrance, Nicolas ^{[4
]}

Goussetis, George ^{[5
]}

Margalef-Rovira, Marc ^{[4
]}

Martini, Enrica ^{[6
]}

Quevedo-Teruel, Oscar ^{[7
]}

Valenta, Vaclav ^{[8
]}

Fonseca, Nelson J. G. ^{[9
]}

Ettorre, Mauro ^{[10
]}

机构：

[1] Univ Calabria, Dipartimento Ingn Informat Modellist Elettron & Si, I-87036 Arcavacata Di Rende, CS, Italy

[2] Delft Univ Technol, Fac Elect Engn Math & Comp Sci, Dept Microelect, NL-2628 CD Delft, Netherlands

[3] Ulm Univ, Inst Microwave Engn, D-89081 Ulm, Germany

[4] Univ Lille, Univ Polytech Hauts de France, IEMN Inst Elect Microelect & Nanotechnol, CNRS,Cent Lille, F-59000 Lille, France

[5] Heriot Watt Univ, Inst Sensors Signals & Syst, Sch Engn & Phys Sci, Edinburgh EH14 4AS, Scotland

[6] Univ Siena, Dept Informat Engn & Math, I-53100 Siena, Italy

[7] KTH Royal Inst Technol, Div Electromagnet Engn, S-11428 Stockholm, Sweden

[8] European Space Agcy, European Space Res & Technol Ctr, NL-2201 AZ Noordwijk, Netherlands

[9] European Space Agcy, Antenna & Submillimeter Waves Sect, NL-2200 AG Noordwijk, Netherlands

[10] Univ Rennes, CNRS, IETR, F-35000 Rennes, France

来源：

IEEE MICROWAVE MAGAZINE | 2023年 / 24卷 / 02期

关键词：

Radio frequency; Satellite antennas; Satellites; Array signal processing; Low earth orbit satellites; Microwave communication; Orbits; PHASED-ARRAY ANTENNA; TRUE-TIME-DELAY; POWER-AMPLIFIER; LUNEBURG LENS; BUTLER MATRIX; BROAD-BAND; TRANSFORMATION-OPTICS; PLATE LENS; BEAM; LNA;

D O I：

10.1109/MMM.2022.3217961

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-Earth orbit (LEO) constellations are revolutionizing the world of satellite communication (Satcom), providing new opportunities to manufacturers and operators and enabling innovative and attractive services to users.

引用

页码：32 / 48

页数：17

共 145 条

[81] A 24-30-GHz TRX Front-End With High Linearity and Load-Variation Insensitivity for mm-Wave 5G in 0.13-μm SiGe BiCMOS [J].