Unsupervised learning in hexagonal boron nitride memristor-based spiking neural networks

Resistive random access memory (RRAM) is an emerging non-volatile memory technology that can be used in neuromorphic computing hardware to exceed the limitations of traditional von Neumann architectures by merging processing and memory units. Two-dimensional (2D) materials with non-volatile switching behavior can be used as the switching layer of RRAMs, exhibiting superior behavior compared to conventional oxide-based devices. In this study, we investigate the electrical performance of 2D hexagonal boron nitride (h-BN) memristors towards their implementation in spiking neural networks (SNN). Based on experimental behavior of the h-BN memristors as artificial synapses, we simulate the implementation of unsupervised learning in SNN for image classification on the Modified National Institute of Standards and Technology dataset. Additionally, we propose a simple spike-timing-dependent-plasticity (STDP)-based dropout technique to enhance the recognition rate in h-BN memristor-based SNN. Our results demonstrate the viability of using 2D-material-based memristors as artificial synapses to perform unsupervised learning in SNN using hardware-friendly methods for online learning.