Permanent, macroscopic deformation of single crystal silicon by mild loading

被引:1
作者
Missale, Elena [1 ]
Chiappini, Andrea [2 ]
Spiess, Richard [3 ]
Speranza, Giorgio [2 ,4 ,5 ]
Pantano, Maria F. [1 ]
机构
[1] Univ Trento, Dept Civil Environm & Mech Engn, Via Mesiano 77, I-38123 Trento, Italy
[2] IFN CNR CSMFO Lab, FBK Photon Unit, Via cascata 56-c, I-38123 Trento, Italy
[3] Univ Padua, Dept Geosci, Via G Gradenigo 6, I-35131 Padua, Italy
[4] Fdn Bruno Kessler, Ctr Mat & Microsyst, Via Sommar 18, I-38123 Trento, Italy
[5] Univ Trento, Dept Ind Engn, Via Sommar 9, I-38123 Trento, Italy
关键词
Silicon; Mechanical properties; Permanent deformation; Raman spectroscopy; EBSD; PLASTIC-DEFORMATION; RAMAN-SPECTROSCOPY; SHUFFLE DISLOCATIONS; DUCTILE TRANSITION; STRESS; MECHANISMS;
D O I
10.1016/j.mtcomm.2023.105442
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Silicon is usually considered a brittle material. However, under specific conditions, such as high temperature, high confining pressure, and complex loading patterns involved in surface machining or microindentation, extremely localized regions with plastic deformation may show up. Herein this paper, we demonstrate the possibility to induce a permanent deformation field extending over macroscopically wide regions, with no need for extreme load. Indeed, this is obtained at room temperature upon applying a relatively small pressure onto single crystal silicon slices machined with a pre-notch at the bottom surface. To deeply characterize the deformed region, which is visible to the naked eye, we adopted an experimental multiscale approach, which involves a combination of optical microscopy and profilometry, Raman spectroscopy, and Electron Backscatter Diffraction (EBSD). Overall, the results collected via different techniques show, in a consistent fashion, that our proposed methodology is an effective engineering pathway to induce controlled permanent deformation in silicon samples, whose effects can be observed across different length scales, from macro to nano.
引用
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页数:5
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