Sintering behavior, crystal structure, and microwave dielectric properties of a novel diopside SrMgGe2O6 ceramic and adjustment of its zf value

被引:15
作者
Wei, Xiaoli [1 ]
He, Yinghan [1 ]
Liu, Kaiyang [1 ]
Gao, Pengxiang [1 ]
Chen, Xiuli [1 ]
Liu, Xiaobin [2 ,3 ]
Zhou, Huanfu [1 ]
机构
[1] Guilin Univ Technol, Sch Mat Sci & Engn, Key Lab Nonferrous Mat & New Proc Technol, Minist Educ, Guilin 541004, Peoples R China
[2] Guilin Univ Technol, Guangxi Key Lab Embedded Technol & Intelligent Sys, Guilin 541004, Peoples R China
[3] Guilin Univ Technol, Coll Informat Sci & Engn, Guilin 541004, Peoples R China
关键词
Ceramics; Diopside; Microstructure; Microwave dielectric properties; RAMAN-SPECTROSCOPY; BOND-VALENCE; TEMPERATURE; ZN; EVOLUTION; MG; CO;
D O I
10.1016/j.ceramint.2022.12.259
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A solid-state process was used to synthesize novel microwave dielectric SrMgGe2O6 ceramics. X-ray diffrac-tometry revealed that these ceramics have monoclinic structures that belong to the C2/c space group. A dense SrMgGe2O6 ceramic was obtained at the optimal sintering temperature of 1225 degrees C, the ceramic exhibited excellent microwave dielectric properties, with er = 8.58, Qxf = 56800 GHz, and zf =-59.06 ppm/degrees C. The zf value is affected by the bond valence and bond energy of the Ge-O bond. The addition of CaTiO3 or TiO2 suc-cessfully adjusted the zf value to approximately zero, with the optimal CaTiO3- and TiO2-included composite ceramics exhibiting excellent dielectric properties, with er = 11.74, Qxf = 22056 GHz, zf = +0.18 ppm/degrees C, and epsilon r = 12.32, Qxf = 20930 GHz, zf =-2.27 ppm/degrees C, respectively.
引用
收藏
页码:13807 / 13815
页数:9
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