Printed Electronics Based on 2D Material Inks: Preparation, Properties, and Applications toward Memristors

被引:22
作者
Chen, Xiaopei [1 ]
Wang, Xiongfeng [1 ]
Pang, Yudong [1 ]
Bao, Guocheng [1 ]
Jiang, Jie [1 ]
Yang, Peng [1 ,2 ]
Chen, Yuankang [1 ]
Rao, Tingke [1 ]
Liao, Wugang [1 ]
机构
[1] Shenzhen Univ, Coll Elect & Informat Engn, Shenzhen 518060, Peoples R China
[2] Shenzhen Technol Univ, Coll Integrated Circuits & Optoelect Chips, Shenzhen 518118, Peoples R China
基金
中国国家自然科学基金;
关键词
2D materials; printed electronics; printed memristors; GRAPHENE OXIDE; RESISTIVE MEMORY; HIGH-RESOLUTION; ORGANIC-SOLVENTS; EXFOLIATION; CONDUCTIVITY; DISPERSIONS; FABRICATION; NANOSHEETS; DEVICE;
D O I
10.1002/smtd.202201156
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Printed electronics, which fabricate electrical components and circuits on various substrates by leveraging functional inks and advanced printing technologies, have recently attracted tremendous attention due to their capability of large-scale, high-speed, and cost-effective manufacturing and also their great potential in flexible and wearable devices. To further achieve multifunctional, practical, and commercial applications, various printing technologies toward smarter pattern-design, higher resolution, greater production flexibility, and novel ink formulations toward multi-functionalities and high quality have been insensitively investigated. 2D materials, possessing atomically thin thickness, unique properties and excellent solution-processable ability, hold great potential for high-quality inks. Besides, the great variety of 2D materials ranging from metals, semiconductors to insulators offers great freedom to formulate versatile inks to construct various printed electronics. Here, a detailed review of the progress on 2D material inks formulation and its printed applications has been provided, specifically with an emphasis on emerging printed memristors. Finally, the challenges facing the field and prospects of 2D material inks and printed electronics are discussed.
引用
收藏
页数:21
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