Terahertz surface plasmon resonance in Dirac electron system topological insulator (Sb, Bi)2(Te, Se)3

被引：0
|
作者：
Sugimoto, H. [1 ]
Nishimura, K. [1 ]
Tabata, H. [1 ,2 ]
机构：
[1] Univ Tokyo, Dept Bioengn, Tokyo, Japan
[2] Univ Tokyo, Dept Elect Engn & Informat Syst, Tokyo, Japan
来源：
2023 48TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES, IRMMW-THZ | 2023年
关键词：
D O I：
10.1109/IRMMW-THz57677.2023.10298905
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Terahertz (THz) wave, corresponding to intermolecular binding energy, is the key to realize a non-labeling bio-medical sensor. We aim to enhance the sensitivity by a selective resonant excitation effect of the specific binding and surface plasmon at the THz band. Here, we report the THz-SPR of (Bi, Sb)(2)(Se, Te)(3) in both experiments and calculations for the first time. We have revealed that bulk electron influence seen in band structure may not contribute much to SPR, and Bi2Se3 has the highest Q value among graphene or topological insulator below 1 THz.
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页数：2
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