A 128-Gb/sD-Band Receiver With Integrated PLL and ADC Achieving 1.95-pJ/b Efficiency in 22-nm FinFET

被引:11
作者
Agrawal, Abhishek [1 ]
Whitcombe, Amy [2 ]
Shin, Woorim [1 ,3 ]
Bhat, Ritesh [1 ]
Kundu, Somnath [1 ,4 ]
Sagazio, Peter [1 ]
Chandrakumar, Hariprasad [5 ]
Brown, Thomas W. [5 ]
Carlton, Brent R. [1 ]
Hull, Christopher [1 ,6 ]
Callender, Steven [1 ]
Pellerano, Stefano [1 ]
机构
[1] Intel Corp, Hillsboro, OR 97124 USA
[2] Intel Corp, Santa Clara, CA 95054 USA
[3] Apple, Cupertino, CA 95014 USA
[4] AMD, Hillsboro, OR 97123 USA
[5] Intel Corp, Adv Design Grp Technol Dev Org, Hillsboro, OR 97124 USA
[6] Amazon, Redmond, WA 98052 USA
关键词
Analog-to-digital converter (ADC); CMOS; FinFET; low-noise amplifier (LNA); phase-locked loop (PLL); receiver (RX); sub-terahertz (subTHz); wideband; BAND; OPTIMIZATION; DESIGN;
D O I
10.1109/JSSC.2023.3315692
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work presents aD-band (110-170 GHz) receiver (RX) with integrated analog-to-digital converter (ADC) and phase-locked loop (PLL). The receiver front end (RXFE) consists of a coupled-line-based Guanella balun matching network, 140-GHz low-noise amplifier (LNA), and Cherry-Hooper (CH) amplifier providing >20-GHz baseband bandwidth. A quadrature PLL provides I/Q local oscillator (LO) signals for down-conversion. Two 32-GS/s hybrid voltage- and time-domain ADCs digitize the RXFE output. The fully integrated 22-nm FinFET CMOS prototype achieves a peak data rate of 128 Gb/s using 16-QAM modulation with-15.2-dB EVM and consumes 246 mW for 1.95-pJ/b efficiency. The stand-alone RXFE without ADC provides 160-Gb/s data rates with-16.4-dB EVM and consumes 166 mW for 1.04-pJ/b efficiency
引用
收藏
页码:3364 / 3379
页数:16
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