Effect of the halogen substitution on the interfacial properties of MAPbI3 (110)/Ti3C2T2 (001): First-principles calculations

被引:3
作者
Fang, Liuru [1 ]
Wang, Yuhua [1 ]
Wang, Yitong [1 ]
Li, Chengbo [2 ]
Xue, Yuanbin [2 ]
Bai, Xiaojing [2 ]
Li, Jianxin [1 ,2 ]
Guo, Yao [2 ]
机构
[1] Wuhan Univ Sci & Technol, Coll Sci, Hubei Prov Key Lab Sci Met Proc, Wuhan 430081, Peoples R China
[2] Anyang Inst Technol, Sch Mat Sci & Engn, Henan Joint Int Res Lab Nanocomposite Sensing Mat, Anyang 455000, Peoples R China
基金
中国国家自然科学基金;
关键词
MAPbI3; Perovskite materials; Electron transport layer; DFT calculations; HIGHLY EFFICIENT; PEROVSKITE; SURFACE; TI3C2TX; CH3NH3PBI3; ENERGY; FILMS;
D O I
10.1016/j.vacuum.2023.112381
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
To improve the optoelectronic properties and charge extraction efficiency of perovskite devices, precise device design and expert interface engineering are essential. In this study, we utilized first-principles simulations to investigate the structural, electrical, and optical characteristics of the interfaces between MAPbI3 and Ti3C2T2 (T = Cl, Br, I). Our computed charge density differences indicate that the internal electric field of MAPbI3/Ti3C2T2 promotes the transfer and separation of photoinduced electrons and holes. Furthermore, the heterostructures exhibit enhanced optical absorption, with higher absorption intensity observed in the visible band. Notably, the PbI2/Ti3C2Br2 interface shows the strongest cohesive energy, charge transfer, and optical absorption among the interfaces investigated. These findings provide detailed insights into the atomic-level interfacial properties of MAPbI3/Ti3C2T2 and offer valuable theoretical recommendations for the development of novel perovskite devices.
引用
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页数:9
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