Target Therapy for Buried Interface Enables Stable Perovskite Solar Cells with 25.05% Efficiency

被引:110
作者
Ji, Xiaofei [1 ,2 ]
Bi, Leyu [1 ,3 ,4 ,5 ]
Fu, Qiang [3 ,4 ,5 ]
Li, Bolin
Wang, Junwei [1 ]
Jeong, Sang Young [6 ]
Feng, Kui [1 ]
Ma, Suxiang [1 ]
Liao, Qiaogan [1 ]
Lin, Francis R. [3 ,4 ,5 ]
Woo, Han Young [6 ]
Lu, Linfeng [2 ,7 ]
Jen, Alex K. -Y. [3 ,4 ,5 ]
Guo, Xugang [1 ]
机构
[1] Southern Univ Sci & Technol SUSTech, Dept Mat Sci & Engn, Shenzhen 518055, Guangdong, Peoples R China
[2] Chinese Acad Sci, Shanghai Adv Res Inst, Interdisciplinary Res Ctr, 99 Haike Rd, Zhangjiang Hitech Pk, Shanghai 201210, Peoples R China
[3] City Univ Hong Kong, Dept Mat Sci & Engn, Kowloon, Hong Kong 999077, Peoples R China
[4] City Univ Hong Kong, Dept Chem, Kowloon, Hong Kong 999077, Peoples R China
[5] City Univ Hong Kong, Hong Kong Inst Clean Energy, Kowloon, Hong Kong 999077, Peoples R China
[6] Korea Univ, Dept Chem, Anamro 145, Seoul 02841, South Korea
[7] Jinneng Clean Energy Technol Ltd, Lvliang 032100, Shanxi, Peoples R China
基金
中国国家自然科学基金;
关键词
buried interface; defect passivation; oxalate; perovskite solar cells; SNO2; FILMS;
D O I
10.1002/adma.202303665
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The buried interface in perovskite solar cells (PSCs) is pivotal for achieving high efficiency and stability. However, it is challenging to study and optimize the buried interface due to its non-exposed feature. Here, a facile and effective strategy is developed to modify the SnO2/perovskite buried interface by passivating the buried defects in perovskite and modulating carrier dynamics via incorporating formamidine oxalate (FOA) in SnO2 nanoparticles. Both formamidinium and oxalate ions show a longitudinal gradient distribution in the SnO2 layer, mainly accumulating at the SnO2/perovskite buried interface, which enables high-quality upper perovskite films, minimized defects, superior interface contacts, and matched energy levels between perovskite and SnO2. Significantly, FOA can simultaneously reduce the oxygen vacancies and tin interstitial defects on the SnO2 surface and the FA(+)/Pb2+ associated defects at the perovskite buried interface. Consequently, the FOA treatment significantly improves the efficiency of the PSCs from 22.40% to 25.05% and their storage- and photo-stability. This method provides an effective target therapy of buried interface in PSCs to achieve very high efficiency and stability.
引用
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页数:10
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